Fairchild Semiconductor MBR1660, MBR1650, MBR1645, MBR1635 Datasheet

Discrete POWER & Signal

MBR1635 - MBR1660

MBR1635 - MBR1660

Technologies

Features

• Low power loss, high efficiency.

• High surge capacity.

.113( 2.87)
.103( 2.62)

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

.16(4.06)
.14(3.56)

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

TO-220AC

16 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

.037( 0.94)
.027( 0.68)

.412( 10.5)

MAX

12

.205( 5.20)
.195( 4.95)

DIA

.154( 3.91)

.148( 3.74)

.594( 15.1)
.587( 14.91)

.56(14.22)
.53(13.46)

PIN 1 +

PIN 2 -

CASE Positive

.27(6.86)
.23(5.84)

Dimensions

are in:

inches (mm)

+

CASE

.185(4.70)
.175(4.44)

.025(0.64)
.014(0.35)

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current
.375” lead length @ T

= 125°C

A

Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 K Hz) @ TA = 125°C

R

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Am bi ent 60
Thermal Resistance, Junction to Lead 1.5
Storage Temperature Range -65 to +175
Operating Junction Temperat ure -65 to +150

16 A

32 A

150 A

2.0

16.6

mW/°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

.11(2.79)
.10(2.54)

W

°C/W
°C/W

°C
°C

.055(1.40)
.045(1.14)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

1635 1645 1650 1660

Peak Repetitive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage
I
I

16 A, TC = 25°C

F =

16 A, TC = 125°C

F =

Peak Repetitive Reverse Surge
Current

2.0 us Pulse Width, f = 1.0 KHz

1999 Fairchild Semiconductor Corporation

35 45 50 60 V

10,000 V/uS

0.2
40

0.63

0.57

1.0
50

0.75

0.65

1.0 0.5 A

MBR1635 - MBR1660 Rev. A

mA
mA

V
V

T ypical Characteristics

MBR1635 - MBR1660

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

20

16

12

SINGLE PHASE
HALF WAVE

8

60HZ
RESISTIVE OR
INDUCT IVE L OAD

4

.375" (9.00mm) LOAD

FORWARD CURRE NT (A)

LENGTHS

0

0 25 50 75 100 125 150 175

AMBI ENT TEMPERATURE ( C)

º

Forward Charact eristics

50

º

T = 150 C

º

A

10

1

0.1

FORWARD CURRE NT (A)

0.01
0 0.2 0.4 0.6 0.8 1 1.2

MBR1635-MBR1645

Pulse Width = 300µS
2% Duty Cycle

FORWARD VOLTAGE (V)

T = 25 C

A

MBR1650-MBR1660

Non-Repetitive Surge Current

150

125

100

75

50

25

0

PEAK FORWARD SURGE CURRENT (A)

12 51020 50100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

50

MBR1635-MBR1645

10

MBR1650-MBR1660

1

0.1

MBR1635-MBR1645

0.01

REVERSE CURRENT (mA)

0.001
0 20406080100120140

PERCENT OF RA TED PEAK REVER SE VOLTAGE (%)

MBR1650-MBR1660

T = 125 C

º

A

º

T = 75 C

A

T = 25 C

º

A

Typical Junction Capacitance

5000

2000

1000

MBR1650-MBR1660

500

200

JUNCTION CAPACITANC E (pF)

100

0.1 1 10 100

REVERSE VOLTAGE (V)

MBR1635-MBR1645

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMP E DA NC E ( C/W)

T. PULSE DU RA TION ( sec.)

MBR1635 - MBR1660 Rev. A