Fairchild Semiconductor MBR1045, MBR1060, MBR1050, MBR1035 Datasheet

MBR1035 - MBR1060

Features

• Low power loss, high efficiency.

• High surge capacity.

.113( 2.87)
.103( 2.62)

• For use in low voltage, high frequency

inverters, free wheeling, and polarity
protection applications.

• Metal silicon junction, majority carrier

conduction.

.16(4.06)
.14(3.56)

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

TO-220AC

10 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings* T

= 25°C unless otherwise noted

A

.037( 0.94)
.027( 0.68)

.412( 10.5)

MAX

12

.205( 5.20)
.195( 4.95)

DIA

.154( 3.91)

.148( 3.74)

.594( 15.1)
.587( 14.91)

.56(14.22)
.53(13.46)

PIN 1 +

PIN 2 -

CASE Positive

.27(6.86)
.23(5.84)

Dimensions

are in:

inches (mm)

Symbol Parameter Value Units

I

O

i

f(repetitive)

i

f(surge)

P

D

R

θ

JA

R

θ

JL

T

stg

T

J

Average Rectified Current 10 A
Peak Repetitive Forward Current

(Rated V

, Square Wave, 20 K Hz) @ TA = 135°C

R

20 A

Peak Forward Surge Current

8.3 ms single half-sine-wave

150 A

Superimposed on rated load (JEDEC method)

Total Device Dissipation

Derate above 25°C

2.0

16.6

Thermal Resistance, Junction to Am bi ent 60
Thermal Resistance, Junction to Lead 2.0
Storage Temperature Range -65 to +175
Operating Junction Temperat ure -65 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

+

CASE

.185(4.70)
.175(4.44)

.025(0.64)
.014(0.35)

.11(2.79)
.10(2.54)

W

mW/°C

°C/W
°C/W

°C
°C

.055(1.40)
.045(1.14)

MBR1035-MBR1060

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

1035 1045 1050 1060

Peak Repetitive Reverse Voltage 35 45 50 60 V
Maximum RMS Voltage 24 31 35 42 V
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current

@ rated V

R

TA = 25°C

= 125°C

T

A

Maximum Forward Voltage
I
I
I
I

10 A, TC = 25°C

F =

10 A, TC = 125°C

F =

20 A, TC = 25°C

F =

20 A, TC = 125°C

F =

Peak Repetitive Reverse Surge
Current

2.0 us Pulse Wi dth, f = 1.0 KHz

1999 Fairchild Semiconductor Corporation

35 45 50 60 V

10,000 V/uS

0.1
15

-

0.57

0.84

0.72

0.80

0.70

0.95

0.85

1.0 0.5 A

MBR1035 - MBR1060, Rev. A

mA
mA

V
V
V
V

T ypical Characteristics

MBR1035-MBR1060

Schotty Barrier Rectifier

(continued)

Forward Current Derating Curve

12

10

8

SINGLE PHASE

6

HALF WAVE
60HZ

4

RESISTIVE OR
INDUCT IVE L OAD
.375" (9.00mm) LOAD

FORWAR D CU RRENT (A)

2

LENGTHS

0

0 25 50 75 100 125 150 175

MBR1035-MBR1045

MBR1050-MBR1060

AMBI ENT TEMPERATURE ( C)

º

Forward Characteristics

50

º

T = 150 C

A

10

MBR1035-MBR1045

1

MBR1050-MBR1060

0.1

FORWARD CURR EN T (A)

0.01
0 0.2 0.4 0.6 0.8 1 1.2

Pulse Widt h = 300µS
2% Dut y Cycle

FORWARD VOLTAGE (V)

T = 25 C

Non-Repetitive Surge Current

175

150

125

100

75

50

25

PEAK FORWARD SURGE CURRENT (A)

0.1 1 10 100

NUMBER OF CYCLES AT 60Hz

Reverse Characteris tics

20

MBR1035-MBR1045

º

A

10

T = 125 C

º

A

1

MBR1050-MBR1060

º

T = 75 C

0.1

MBR1035-MBR1045

MBR1050-MBR1060

0 20406080100120

PERCENT OF RA TED PEAK REVER SE VOLTAGE (%)

REVERSE CURRENT (mA)

0.001

0.01

A

T = 25 C

º

A

Typical Junction Capacitance

5000

2000

1000

500

200

JUNCTIO N CAP ACI TAN C E (pF)

100

MBR1050-MBR1060

0.1 1 10 100

REVERSE VOLTAGE (V)

MBR1035-MBR1045

Transient Thermal Impedance

100

º

10

1

0.1

0.01 0.1 1 10 100

TRANSIEN T THERMAL IMP E DA NC E ( C/W)

T. PULSE DU RA TION ( sec.)

MBR1035 - MBR1060, Rev. A