Fairchild Semiconductor KST3906 Datasheet
KST3906
KST3906
General Purpose Transistor
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -40 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current -200 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
(sat) * Collector-Emitter Sa turation V oltage IC= -10mA, IB= -1mA
CE
V
(sat) * Base-Emitter Saturation Voltage IC= -10mA, IB= -1.0mA
BE
f
T
C
ob
NF Noise Figure IC= -100µA, VCE= -5V
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -10µA, IE=0
* Collector-Emitter Breakdown Voltage IC= -1.0mA, IB=0
Emitter-Base Breakdown Voltage IE=10µA, IC=0
Collector Cut-off Current VCE= -30V, VEB= -3V
* DC Current Gain VCE= -1V, IC= -0.1mA
Current Gain Bandwidth Product IC= -10mA, VCE= -20V
Output Capaci tance VCB= -5V, IE=0, f=1.0MHz
Turn On Time VCC= -3V, VBE= -0.5V
Turn Off Ti me VCC= -3V, IC= -10mA
=25°C unless otherwise noted
a
Ta=25°C unless otherwise noted
= -1V, IC= -1mA
V
CE
V
= -1V, IC= -10mA
CE
= -1V, IC= -50mA
V
CE
= -1V, IC= -100mA
V
CE
= -50mA, IB= -5.0mA
I
C
= -50mA, IB= -5.0mA
I
C
f=100MHz
=1KΩ
R
S
f=10Hz to 15.7KHz
I
= -10mA, IB1= -1mA
C
I
= -1mA
B1=IB2
3
1
1. Base 2. Emitter 3. Collector
Min. Max. Units
-40 V
-40 V
-5 V
60
80
100
60
30
-0.65 -0.85
250 MHz
2
SOT-23
-50 nA
300
-0.25
-0.4
V
V
V
-0.95
V
4.5 pF
4dB
70 ns
300 ns
Marking
2A
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST3906
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
VCE = -1V
IE = 0
f = 1MHz
-10
IC = 10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.1 -1 -10 -100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
VCE = -20V
100
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
0.1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
10
-0.1 -1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacit a nc e Figure 4. Current Gai n Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Loading...