Fairchild Semiconductor KST3904 Datasheet
KST3904
KST3904
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 200 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=10mA, IB=1mA
V
CE
(sat) * Base-Emitter Saturation Voltage IC=10mA, IB=1mA
V
BE
C
ob
f
T
NF Noise Figure I
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 60 V
* Collector-Emitter Breakdown Voltage IC=1mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCE=30V, VEB=3V 50 nA
* DC Current Gain VCE=1V, IC=0.1mA
Output Capaci tance VCB=5V, IE=0, f=1MHz 4 pF
Current Gain-Bandwidth Product VCE=20V, IC=10mA, f=100MHz 300 MHz
Turn On Time VCC=3V, VBE=0.5V
Turn Off Time VCC=3V, IC=10mA,
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=1V, IC=1mA
V
CE
=1V, IC=10mA
V
CE
V
=1V, IC=50mA
CE
=1V, IC=100mA
V
CE
=50mA, IB=5mA
I
C
=50mA, IB=5mA
I
C
=100µA, VCE=5V, RS=1KΩ
C
f=10Hz to 15.7KHz
=10mA, IB1=1mA
I
C
=1mA
I
B1=IB2
40
70
100
60
30
0.65 0.85
300
0.2
0.3
0.95
5dB
70 ns
250 ns
V
V
V
V
Marking
1A
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
Typical Characteristics
KST3904
240
200
160
120
80
, DC CURRENT GAIN
FE
h
40
0
0.1 1 10 100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
10
1
[pF], CA PACITANCE
ob
C
IE = 0
f = 1MHz
VCE = 1V
10
IC = 10 I
B
1
VBE(sat)
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VCE(sat)
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Collector-Emitter Saturation Voltage
1000
VCE = 20V
100
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
0.1
1 10 100
VCB [V], COLLECTOR-BASE VOLTAGE
10
0.1 1 10 100
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacit a nc e Figure 4. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002
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