Fairchild Semiconductor KST2907A Datasheet
KST2907A
KST2907A
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current -600 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
CE
(sat) * Base-Emitter Sa turation Voltage IC= -150mA, IB= -15mA
V
BE
f
T
C
ob
t
ON
t
OFF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -60 V
* Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -50V, IE=0 -0.01 µA
DC Current Gain VCE= -10V, IC= -0.1mA
Current Gain Bandwidth Product IC= -50mA, VCE= -20V
Output Capaci tance VCB= -10V, IE=0, f=1.0MHz 8 pF
Turn On Tim e VCC= -30V, IC= -150mA
Turn Off Time VCC= -6V, IC= -150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -10V, IC= -1.0mA
V
CE
= -10V, IC= -10mA
V
CE
= -10V, IC= -150mA
*V
CE
= -10V, IC= -500mA
*V
CE
= -500mA, IB= -50mA
I
C
= -500mA, IB= -50mA
I
C
f=100MHz
= -15mA
I
B1
= -15mA
I
B1=IB2
75
100
100
100
50
200 MHz
300
-0.4
-1.6
-1.3
-2.6
50 ns
110 ns
V
V
V
V
Marking
2F
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Typical Characteristics
KST2907A
1000
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
12
10
8
6
4
[pF], CAPACITANCE
ob
C
2
0
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
IE = 0
f = 1MHz
VCE = 10V
-10
IC = 10 I
B
-1
VBE(sat)
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VCE(sat)
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
VCE = -20V
100
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Output Capacit a nc e Figure 4. Current Gai n Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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