Fairchild Semiconductor KST2484 Datasheet
KST2484
Low Noise Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST2484
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
• Refer to KSP5088 for graphs
Collector Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current 50 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=1mA, IB=0.1mA 0.35 V
V
CE
(on) Base-Emitter On Voltage IC=1mA, VCE=5V 0.95 V
V
BE
C
ob
NF Noise Figure I
Collector-Base Breakdown Voltage IC=10µA, IE=0 60 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 60 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 V
Collector Cut-off Current VCB=45V, IE=0 10 nA
Emitter Cut-off Current VEB=5V, IC=0 10 nA
DC Current Gain VCE=5V, IC=1mA
Output Capacitance VCB=5.0V, IE=0, f=1MHz, 6 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
=5V, IC=10mA
CE
=10µA, VCE=5V
C
=10KΩ, f=1KHz
R
S
250
800
3dB
Marking
1U
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST2484
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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