Fairchild Semiconductor KST24 Datasheet
KST24
VHF Mixer Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST24
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
(j-a) Thermal Resistance Junction to Ambient 357 °C/W
R
TH
• Refer to KSP24 for graphs
Collector-Base Voltage 40 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4 V
Collector Current 100 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min . Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
f
T
C
ob
G
G
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=100µA, IE=0 40 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 30 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 4 V
Collector Cut-off Current VCB=15V, IE=0 50 nA
DC Current Gain VCE=10V, IC=8mA 30
* Current Gain Bandwidth Product VCE=10V, IC=8mA
Output Capacitance VCB=10V, IE=0, f=1MHz 0.25 0.36 pF
Conversion Gain (213MHz to 45MHz)
(60MHz to 45MHz)
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
f=100MHz
IC=8mA, VCC=20V
Oscillator Injection=150mV1924
400 620 MHz
24
29
dB
dB
Marking
3A
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST24
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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