Fairchild Semiconductor KST2222A Datasheet
KST2222A
KST2222A
General Purpose Transistor
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
CBO
CEO
EBO
C
C
STG
Collector-Base Voltage 75 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 6 V
Collector Current 600 mA
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
V
CE
(sat) * Base-Emitter Sa turation Voltage IC=150mA, IB=15mA
V
BE
f
T
C
ob
NF Noise Figure I
t
ON
t
OFF
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=10µA, IE=0 75 V
Collector-Emitter Breakdown Voltage IC=10mA, IB=0 40 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
Collector Cut-off Current VCB=60V, IE=0 0.01 µA
* DC Current Gain VCE=10V, IC=0.1mA
Current Gain Bandwidth Product IC=20mA, VCE=20V, f=100MHz 300 MHz
Output Capaci tance VCB=10V, IE=0, f=1MHz 8 pF
Turn On Time VCC=30V, IC=150mA
Turn Off Time VCC=30V, IC=150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
=10V, IC=1mA
V
CE
=10V, IC=10mA
V
CE
=10V, IC=150mA
V
CE
=10V, IC=500mA
V
CE
=500mA, IB=50mA
I
C
=500mA, IB=50mA
I
C
=100µA, VCE=10V
C
=1KΩ, f=1MHz
R
S
=0.5V, IB1=15mA
V
BE
=15mA
I
B1=IB2
35
50
75
100
40
0.6 1.2
300
0.3
1.0
2.0
285 ns
4dB
35 ns
V
V
V
V
Marking
1P
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST2222A
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Loading...