Fairchild Semiconductor KST10 Datasheet
KST10
VHF/UHF Transistor
NPN Epitaxial Silicon Transistor
3
2
SOT-23
1. Base 2. Emitter 3. Collector
1
KST10
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
P
C
T
STG
R
(j-a) Thermal Resistance junction to Ambient 357 °C/W
TH
• Refer to KSP10 for graphs
Collector Base Voltage 30 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3 V
Collector Power Dissipation 350 mW
Storage Temperature 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=4mA, IB=0.4mA 0.5 V
V
CE
V
BE
f
T
C
ob
C
rb
C
c·rbb´
Collector-Base Breakdown Voltage IC=100µA, IE=0 30 V
Collector-Emitter Breakdown Voltage IC=1mA, IB=0 25 V
Emitter-Base Breakdown Voltage IE=10µA, IC=0 3 V
Collector Cut-off Current VCB=25V, IE=0 100 nA
Emitter Cut-off Current VBE=2V, IC=0 100 nA
DC Current Gain VCE=10V, IC=4mA 60
Base-Emitter On Voltage VCE=10V, IC=4mA 0.95 V
Current Gain Bandwidth Product VCE=10V, IC=4mA, f=100MHz 650 MHz
Output Capacitance VCB=10V, IE=0, f=1MHz 0.7 pF
Common-Base Feedback Capacitance VCB=10V, IE=0, f=1MHz 0.65 pF
Collector Base Time Constant VCB=10V, IC=4mA, f=31.8MHz 9 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
Marking
3E
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Package Dimensions
0.40
±0.03
KST10
SOT-23
0.20 MIN
0.45~0.60
0.95
2.90
±0.03
1.90
±0.10
0.95
±0.03
±0.03
±0.10
0.40
±0.03
0.97REF 1.30
0.508REF
±0.10
2.40
0.96~1.14
0.03~0.10
0.38 REF
+0.05
0.12
–0.023
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
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