KSR1101
KSR1101
Switching Application
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
=4.7KΩ, R2=4.7KΩ)
1
(Bias Resistor Built In)
3
• Complement to KSR2101
1. Base 2. Emitter 3. Collector
Marking
R01
Equivalent Circuit
R1
B
R2
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage 50 V
Collector-Emitter Voltage 50 V
Emitter-Base Voltage 10 V
Collector Current 100 mA
Collector Power Dissipation 200 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta=25°C unless otherwise noted
SOT-23
1
2
C
E
Electrical Characteristics
Ta=25°C unless otherwise noted
Symbol Parameter T est Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
I
CBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 0.3 V
V
CE
f
T
C
ob
Collector-Base Breakdown Voltage IC=10µA, IE=0 50 V
Collector-Emitter Breakdown Voltage IC=100µA, IB=0 50 V
Collector Cutoff Current VCB=40V, IE=0 0.1 µA
DC Current Gain VCE=5V, IC=10mA 20
Current Gain Bandwidth Product VCE=10V, IC=5mA 250 MHz
Output Capacitance VCB=10V, IE=0
3.7 pF
f=1.0MHz
(off) Input Off Voltage VCE=5V, IC=100µA0.5 V
V
I
(on) Input On Voltage VCE=0.3V, IC=20mA 3 V
V
I
R
1
R
1/R2
©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002
Input Resistor 3.2 4.7 6.2 KΩ
Resistor Ratio 0.9 1 1.1
Typical Characteristics
KSR1101
1000
100
, DC CURRENT GAIN
FE
h
10
1 10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Input On Voltage
1000
100
A], COLLECTOR CURRENT
µ
[
C
I
10
0.0 0.4 0.8 1.2 1.6 2.0 2.4
VI(OFF)[V], INPUT OFF V OL TA GE
VCE = 5V
R1 = 4.7K
R2 = 4.7K
VCE = 5V
R1 = 4.7K
R2 = 4.7K
100
10
1
(on)[V], INPUT VOLTAGE
I
V
0.1
0.1 1 10 100
VCE =0.3V
R1 = 4.7K
R2 = 4.7K
IC[mA], COLLECTOR CURRENT
280
240
200
160
120
80
[mW], POWER DISSIPATION
C
40
P
0
0 255075100125150175
Ta[oC], AMBIENT TEMPERATURE
Figure 3. Input Off Voltage Figure 4. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. A2, October 2002