High Voltage Transistor
• High Collector-Emitter Voltage: V
• Low Collector-Emitter Saturation Voltage
• Complement to KSP44
CEO
= -400V
KSP94
KSP94
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -400 V
Collector-Emitter Voltage -400 V
Emitter-Base Voltage -6 V
Collector Current -300 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55~150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
h
FE1
h
FE2
h
FE3
h
FE4
(sat)
V
CE
V
(sat)
CE
(sat) Base-Emitter Saturation Voltage IC= -10mA, IB= -1mA -750 mV
V
BE
C
ob
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -400 V
Collector-Emitter Breakdown Voltage IC= -100µA, VBE=0 -400 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -6 V
Collector Cut-off Current VCB= -300V, VE=0 -100 nA
Collector Cut-off Current VCE= -400V, VBE=0V -1 µA
Emitter Cut-off Current VBE= -4V, IC=0 -100 nA
DC Current Gain VCE= -10V , IC= -1mA
Collector-Emitter Saturation Voltage IC= -10mA, IB= -1mA
1
2
Output Capacitance VCB= -20V , IE=0, f=1MHz 7 pF
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
= -10V , IC= -10mA
V
CE
V
= -10V , IC= -50mA
CE
= -10V , IC= -100mA
V
CE
= -50mA, IB= -5mA
I
C
40
50
45
40
300
-500
-750
mV
mV
©2002 Fairchild Semiconductor Corporation Rev. A2, July 2002
Typical Characteristics
KSP94
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
-10
-1
-0.1
(sat), SATURATION VOLTAGE
CE
V
-0.01
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
VCE = -10V
IC = 10 I
-10
-1
-0.1
(sat), SATURATION VOLTAGE
BE
V
-0.01
-1 -10 -100 -1000
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
100
B
10
[pF], CAPACITANCE
ob
C
1
-0.1 -1 -10 -100
IE = 0
f = 1MHz
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, July 2002