Fairchild Semiconductor KSP92 Datasheet
High Voltage Transistor
KSP92/93
KSP92/93
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
CBO
CEO
EBO
C
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage -5 V
Collector Current -500 mA
Collector Power Dissipation (Ta=25°C) 625 mW
Derate above 25°C5mW/°C
P
C
Collector Power Dissipation (TC=25°C) 1.5 W
Derate above 25°C12mW/°C
T
J
T
STG
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) *Collector -Emitter Satu r a ti on Voltage IC= -20mA, IB= -2mA -0.50 V
V
CE
(sat) * Base-Emitter Saturation Voltage IC= -20mA, IB= -2mA -0.90 V
V
BE
f
T
C
ob
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage
* Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
Collector Cur-off Current
Emitter Cut-off Current VEB= -3V, IC=0 -0.10 µA
* DC Current Gain VCE= -10V, IC= -1mA
Current Gain Bandwidth Product VCE= -20V, IC= -10mA, f=100MHz 50 MHz
Output Capaci tance
Ta=25°C unless otherwise noted
: KSP92
: KSP93
: KSP92
: KSP93
Ta=25°C unless otherwise noted
IC= -100µA, IE=0
: KSP92
: KSP93
IC= -1mA, IB=0
: KSP92
: KSP93
: KSP92
: KSP93
: KSP92
: KSP93
= -200V, IE=0
V
CB
= -160V, IE=0
V
CB
= -10V, IC= -10mA
V
CE
= -10V, IC= -30mA
V
CE
= -20V, IE=0
V
CB
f=1MHz
-300
-200
-300
-200
-300
-200
-300
-200
-0.25
-0.25
25
40
25
6
8
V
V
V
V
V
V
V
V
µA
µA
pF
pF
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
Typical Characteristics
KSP92/93
1000
100
10
, DC CURRENT GAIN
FE
h
1
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Saturation Voltage
100
C
ib
10
[pF], CAPACITANCE
ob
[pF], C
ib
C
1
-0.1 -1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
VCE = -10V
C
ob
-10000
-1000
VBE(sat)
-100
(sat)[mV], SATURAT I O N VOL TA G E
CE
(sat), V
BE
-10
V
-1 -10 -100 -1000
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
1000
VCE = -20V
f = 100MHz
100
[MHz],
T
f
CURRENT GAIN BANDWIDTH PRODUCT
10
-1 -10 -100
IC[mA], COLLECTOR CURRENT
Figure 3. Capacitance Figure 4. Current Gain Bandwidth Product
-500
-100
1.5 WATT THERMAL
LIMITATION@TC=25
625mW THERMAL
LIMITATION@TA=25
BONDING WIRE LIMITATION
[mA], COLLECTOR CURRENT
-10
SECOND BREAKDOWN
C
I
LIMITATION
℃
Tj=150
-5
-3 -10 -100 -400
VCE[V], CO LLEC TOR-E MITTE R VOLTAGE
100
µ
1ms
s
dc
KSP93
℃
℃
KSP92
Figure 5. Active-Regio Safe Operating Area
©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
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