Fairchild Semiconductor KSP43, KSP42 Datasheet
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP42/43
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Electrical Characteristics
Ta=25°C unless otherwise noted
* Pulse Test: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector Base Voltage
: KSP42
: KSP43
300
200
V
V
V
CEO
Collector-Emitter Voltage
: KSP42
: KSP43
300
200
V
V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage
: KSP42
: KSP43
IC=100µA, IE=0
300
200
V
V
BV
CEO
* Collector -Emitter Breakdown Voltage
: KSP42
: KSP43
IC=1mA, IB=0
300
200
V
V
BV
EBO
Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
I
CBO
Collector Cut-off Current
: KSP42
: KSP43
V
CB
=200V, IE=0
V
CB
=160V, IE=0
100
100
nA
nA
I
EBO
Emitter Cut-off Current
: KSP42
: KSP43
V
BE
=6V, IC=0
V
BE
=4V, IC=0
100
100
nA
nA
h
FE
* DC Current Gain VCE=10V, IC=1mA
V
CE
=10V, IC=10mA
V
CE
=10V, IC=30mA
25
40
40
V
CE
(sat) * Col l ector-Emitter Saturation Voltage IC=20mA, IB=2mA 0.5 V
V
BE
(sat) * Base-Emitter Saturation Voltage IC=20mA, IB=2mA 0.9 V
C
ob
Output Capacitance
: KSP42
: KSP43
VCB=20V, IE=0
f=1MHz 3
4
pF
pF
f
T
Current Gain Bandwidth Product VCE=20V, IC=10mA
f=100MHz
50 MHz
KSP42/43
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
=KSP42: 300V
KSP43: 200V
• Collector Power Dissipation: P
C
(max)=625mW
1. Emitter 2. Base 3. Collector
TO-92
1
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSP42/43
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
110100
10
100
1000
VCE = 10V
h
FE
, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100
0.01
0.1
1
10
IC = 10 I
B
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
IE = 0
f = 1MHz
C
cb
[pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100
0
20
40
60
80
100
120
VCE = 20V
f
T
[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
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