Fairchild Semiconductor KSP2907A Datasheet
General Purpose Transistor
• Collector-Emitter Voltage: V
• Collector Power Dissipation: P
• Refer to KSP2907 for graphs
= 60V
CEO
(max)=625mW
C
KSP2907A
KSP2907A
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage -60 V
Collector-Emitter Voltage -60 V
Emitter-Base Voltage -5 V
Collector Current -600 mA
Collector Power Dissipation 625 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Tes t Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
CE
(sat) Base Emitter Saturation Voltage IC= -150mA, IB= -15mA
V
BE
C
ob
f
T
t
ON
t
OFF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
* Also available as and PN2907
Collector-Base Breakdown Voltage IC= -10µA, IE=0 -60 V
* Collector Emitter Breakdown Voltage IC= -10mA, IB=0 -60 V
Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
Collector Cut-off Current VCB= -50V , IE=0 -10 nA
DC Current Gain IC= -0.1mA, VCE= -10V
Output Capacitance VCB= -10V , IE=0
* Current Gain Bandwidth Product IC= -50mA, VCE= -20V
Turn On Time VCC= -30V, IC= -150mA
Turn Off Time VCC= -6V, IC= -150mA
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
V
= -10V , IC= -1mA,
CE
= -10V , IC= -10mA
V
CE
= -10V , *IC= -150mA
V
CE
V
= -10V , *IC= -500mA
CE
= -500mA, IB= -50mA
I
C
I
= -500mA, IB= -50mA
C
f=1MHz
f=100MHz
I
= -15mA
B1
= -15mA
I
B1=IB2
75
100
100
100
300
50
-0.4
-1.6
-1.3
-2.6
8pF
200 MHz
45 ns
100 ns
V
V
V
V
©2002 Fairchild Semiconductor Corporation Rev. A2, February 2002
Typical Characteristics
KSP2907A
1000
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
100
10
1
[pF], CAPACITANCE
ob
C
VCE = -10V
IE = 0
f = 1MHz
-10
IC = 10 I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
VBE(sat)
VCE(sat)
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Base-Emitter Saturation Voltage
1000
VCE = -20V
100
[MHz],
T
f
0.1
-1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 3. Output Capacit a nc e Figure 4. Current Gai n Bandwidth Product
©2002 Fairchild Semiconductor Corporation
CURRENT GAIN BANDWIDTH PRODUCT
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
Rev. A2, February 2002
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