Fairchild Semiconductor KSD2058 Datasheet
Low Frequency Power Amplifier
KSD2058
KSD2058
1
TO-220F
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
IB
PC
P
T
T
CBO
CEO
EBO
C
J
STG
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 7 V
Collector Current 3 A
Base Current 0.5 A
Collector Dissipation (Ta=25°C) 1.5 W
Collector Dissipation (TC=25°C) 25 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
IEBO
VCEO
hFE
(Sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.2A 1.5 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
t
ON
tSTG
tF
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Turn ON Time V
Storage Time 1.3 µs
Fall Time 0.65 µs
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 60V, IE = 0 10 µA
CB
= 7V , IC = 0 1 mA
EB
= 5V, IC = 0.5A 8
CE
= 5V, IC = 0.5A 3 V
CE
= 5V, IC = 0.5A 0.4 MHz
CE
= 10V, f = 1MHz 35 pF
CB
= 30V, IC = 2A
CC
I
= - IB2 = 0.2A
B1
= 15Ω
R
L
0.65 µs
hFE Classification
Classification O Y G
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
60 ~ 120 100 ~ 200 150 ~ 300
Typical Characteristics
KSD2058
= 70mA
B
I
IB = 60mA
IB = 50mA
IB = 40mA
IB = 0mA
3.0
IB = 90mA
IB = 80mA
2.5
2.0
1.5
1.0
Ic[A], COLLECTOR CURRENT
0.5
0.0
0123456
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
1
0.1
IB = 30mA
IB = 20mA
IB = 10mA
Ic = 10 I
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
VCE = 5V
IC[A], COLLECTOR CURRENT
10
B
ICmax(pulse)
IC(max)
1
1mS
10ms
100mS
1S
DC
(sat)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area
30
25
20
15
10
[W], POWER DISSIPATION
C
5
P
0
Tc=Ta
INFINITE HEAT SINK
NO HEAT SINK
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
MAX
CEO
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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