Fairchild Semiconductor KSD1944 Datasheet
High Gain Power Transistor
KSD1944
KSD1944
1
1.Base 2.Collector 3.Emitter
TO-220F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
IC
PC
T
T
CBO
CEO
EBO
J
STG
Collector-Base Voltage 80 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 8 V
Collector Current 3 A
Collector Current (TC=25°C) 30 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
I
CBO
IEBO
h FE
(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.05A 1.5 V
V
BE
(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.05A 1 V
V
CE
Collector-Emitter Breakdown Voltage IC = 25mA, IB = 0 60 V
Collector Cut-off Current V
Emitter Cut-off Cu rr en t V
DC Current Gain V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
CB
EB
CE
= 80V, IE = 0 100 µA
= 8V, IC = 0 10 µA
= 4V, IC = 0.5A 400 2000
©2000 Fairchild Semiconductor International Rev. A, February 2000
Typical Characteristics
KSD1944
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ic[A], COLLECTOR CURRENT
0.2
012345678910
IB = 1.2mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
VBE(sat)
IC[A], COLLECTOR CURRENT
VCE(sat)
0.1 1 10
IB = 1mA
IB = 0.8mA
IB = 0.6mA
IB = 0.4mA
IB = 0.2mA
Ic = 40 I
10000
VCE = 4V
1000
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
B
10
ICMAX(DC)
DC
1
[A], COLLECTOR CURRENT
C
I
0.1
1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
40
35
30
25
20
15
10
[W], POWER DISSIPATION
C
P
5
0
25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Figure 4. Safe Operating Area
Rev. A, February 2000
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