Fairchild Semiconductor KSC3569 Datasheet

KSC3569

High Speed Switching Application

• Low Collector Saturation Voltage

• Specified of Reverse Biased SOA With Inductive Loads

KSC3569

TO-220F

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

TC=25°C unless otherwise noted

1

1.Base 2.Collector 3.Emitter

Symbol Parameter Value Units

V

CBO

V

CEO

V

EBO
IC
ICP
IB

P

C

T

J

T

STG

* PW≤350µs, Duty Cycle≤10%

Electrical Characteristics

Collector-Base Voltage 500 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 7 V
Collector Current (DC) 2 A
*Collector Current (Pulse) 4 A
Base Current 1 A
Collector Dissipation (TC=25°C) 15 W
Junction Temperature 150 °C
Storage T emperature - 55 ~ 150 °C

TC=25°C unless otherwise noted

Symbol Parameter T est Condition Min. Max. Units

V

(sus) Collector-Emitter Sustaining Voltage IC = 0.5A, I

CEO

(sus)1 Collector-Emitter Sustaining Voltage IC = 0.5A, IB1 = -IB2 = 0.1A

V

CEX

V

(sus)2 Collector-Emitter Sustaining Voltage IC = 1A, IB1 = -IB2 = 0.2A,

CEX

I

CBO

I

CER

I

CEX1

I

CEX2

IEBO

h

FE1

h

FE2

V

(sat) * Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1 V

CE

(sat) * Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A - 1.2 V

V

BE
tON
tSTG
tF

* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed

Collector Cut-off Current V
Collector Cut-off Current V

Collector Cut-off Current V
Collector Cut-off Current V

Emitter Cut-off Cu rr en t V
* DC Current Gain V

Turn ON Time V
Storage Time 2.5 µs
Fall Time 1 µs

= 125°C, L = 180µH, Clamped

T

a

= 125°C, L = 180µH, Clamped

T

a

= 400V, IE = 0 10 µA

CB

= 400V, R

CE

T

= 125°C

C

= 400V, VBE (off) = -5 V 10 µA

CE

CE

= 125°C

T

C

= 5V, IC = 0 10 µA

BE

= 5V, IC = 0.1A

CE

= 5V, IC = 0.5A

V

CE

= 150V, IC = 0.5A

CC

I

= -IB2 = 0.1A

B1

= 300Ω

R

L

= 0.1A, L = 1mH 400 V

B1

= 51Ω @

BE

= 400V, VBE (off) = -5 V @

450 V

400 V

1mA

1mA

20

80

10

1 µs

hFE Classification

Classification R O Y

h

FE1

©2000 Fairchild Semiconductor International Rev. A, February 2000

20 ~ 40 30 ~ 60 40 ~ 80

Typical Characteristics

KSC3569

= 40mA

I

B

= 90mA

I

B

= 50mA

I

B

= 80mA

I

B

= 30mA

I

B

= 20mA

I

B

= 70mA

I

B

= 60mA

I

B

1.0

0.8

0.6

0.4

= 100mA

I

B

IB = 10mA

[A], COLLECTOR CURRENT

0.2

C

I

0.0
012345

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

10

1

0.1

(sat)[V], SATURATION VOLTAGE

CE

IC = 5 I

VBE(sat)

VCE(sat)

1000

VCE = 5V

100

10

, DC CURRENT GAIN

FE

h

1

1 10 100 1000

IC[A], COLLECTOR CURRENT

IC = 5 IB1 = -5 I

B2

t

STG

t

F

t

ON

s], TIME

µ

[

F

, t

STG

, t

ON

t

10

1

0.1

B

(sat), V

BE

V

0.01
1 10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

10000

Dissipation Limited

1000

100

[mA], COLLECTOR CURRENT

C

I

10

1 10 100 1000

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area

©2000 Fairchild Semiconductor International

1ms

10ms

S/b Limited

0.01
10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 4. Switching Time

1.0

10

100

µ

s

µ

s

0.8

0.6

0.4

0.2

[A], COLLECTOR CURRENT

C

I

0.0
0 100 200 300 400 500

VCE[V], COLLECTOR-EMITTER VOLTAGE

(sus)

(sus)

CEX

CEO

V

V

Rev. A, February 2000