Fairchild Semiconductor KSC3502 Datasheet
CRT Display, Video Output
• High Voltage : V
• Low Reverse Transfer Capacitance: C
CEO
=200V
re
KSC3502
KSC3502
=1.2pF @ VCB=30V
1
TO-126
1. Emitter 2.Collector 3.Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Collector-Base Voltage 200 V
Collector-Emitter Voltage 200 V
Emitter-Base Voltage 5 V
Collector Current (DC) 100 mA
Collector Current (Pulse) 200 mA
Collector Dissipation (TC=25°C) 5 W
Collector Dissipation (Ta=25°C) 1.2 W
Junction T emperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC = 20mA, IB = 2mA 0.6 V
V
CE
(sat) Base-Emitter Saturation Voltage IC = 20mA, IB = 2mA 1 V
V
BE
f
T
Cob
Cre
Collector-Base Breakdown Voltage IC = 10µA, IE = 0 200 V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 200 V
Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
Reverse Transfer Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= 150V, IE = 0 0.1 µA
CB
= 4V, IC = 0 0.1 µA
EB
= 10V , IC = 10mA 40 320
CE
= 30V , IC = 10mA 150 MHz
CE
= 30V, f= 1MHz 1.7 pF
CB
= 30V, f= 1MHz 1.2 pF
CB
h
Classification
FE
Classification C D E F
h
FE
©2000 Fairchild Semiconductor International Rev. A, February 2000
40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320
Typical Characteristics
KSC3502
20
16
12
8
4
[mA], COLLECTOR CURRENT
C
I
0
0246810
IB = 160
= 140
I
B
= 120
I
B
= 100
I
B
= 80
I
B
= 60
I
B
= 40
I
B
= 20
I
B
IB = 0
A
µ
µ
A
A
µ
A
µ
A
µ
A
µ
A
µ
A
µ
VCE[V], CO LLECT OR-EM I TTER V OLTAG E
Figure 1. Static Characteristic Figure 2. Static Characteristic
1000
100
10
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100 1000
IC[mA], COLLECTOR CURRENT
VCE = 10V
10
8
6
4
2
[mA], COLLECTOR CURRENT
C
I
0
0 20406080100
= 80
I
B
= 70
I
B
IB = 60
IB = 50
IB = 40
= 30
I
B
= 20
I
B
= 10
I
B
IB = 0
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
A
µ
A
µ
VCE[V], CO LLECT OR-EM I TTER V OLTAG E
10
1
0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC = 10 I
B
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage
160
140
120
100
80
60
40
[mA], COLLECTOR CURRENT
C
20
I
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance
©2000 Fairchild Semiconductor International
Collector-Emitter Saturation Voltage
100
VCE = 10V
10
1
[pF], CAPACITANCE
ob
C
0.1
0.1 1 10 100 1000
VCB[V], COLLECTOR-BASE VOLTAGE
f = 1MHz
Rev. A, February 2000
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