Fairchild Semiconductor KSA473 Datasheet
KSA473
Low Frequency Power Amplifier
Power Regulator
• Collector Current : IC= -3A
• Collector Dissipation : P
• Complement to KSC1173
PNP Epitaxial Silicon Transistor
= 10W (TC=25°C)
C
1
1.Base 2.Collector 3.Emitter
TO-220
KSA473
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
T
T
CBO
CEO
EBO
C
C
J
STG
Collector-Base Voltage - 30 V
Collector-Emitter Voltage - 30 V
Emitter-Base Voltage - 5 V
Collector Current - 3 A
Collector Dissipation (TC=25°C) 10 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC = - 2A, IB = - 0.2A - 0.3 - 0.8 V
V
CE
(on) Base-Emitter ON Voltage V
V
BE
f
T
C
ob
Collector-Base Breakdown Voltage IC = - 500µA, IE = 0 - 30 V
Collector-Emitter Breakdown Voltage IC = - 10mA, IB = 0 - 30 V
Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 - 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
Current Gain Bandwidth Product VCE= - 2V, IC = - 0.5A 100 MHz
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 20V, IE = 0 - 1.0 µA
CB
= - 5V, IC = 0 - 1.0 µA
EB
= - 2V, IC = - 0.5A
CE
V
= - 2V, IC = - 2.5A
CE
= - 2V, IC = - 0.5A - 0.75 - 1.0 V
CE
= - 10V, IE = 0,
CB
f = 1MHz
70
25
240
40 pF
h
Classification
FE
Classification O Y
h
FE1
©2000 Fairchild Semiconductor International Rev. A, February 2000
70 ~ 140 120 ~ 240
Typical Characteristics
KSA473
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
[A], COLLECTOR CURRENT
C
I
-0.4
-0.0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
IB = -40mA
IB = -35mA
IB = -30mA
IB = -25mA
IB = -20mA
IB = -15mA
IB = -10mA
IB = -5mA
IB = -3mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
VBE(sat)
VCE(sat)
IC = 10 I
1000
VCE = -2V
100
10
, DC CURRENT GAIN
FE
h
1
-0.01 -0.1 -1 -10
IC[A], COLLECTOR CURRENT
B
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
[A], COLLECTOR CURRENT
C
I
-0.4
-0.0
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
VCE = -2V
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Base-Emitter On Voltage
-10
f=1MHz
IE=0
IC MAX. (Pulse)
IC MAX. (DC)
-1
[A], COLLECTOR CURRENT
C
I
-0.1
-1 -10 -100
TC=25
* Single Pulse
℃
TC=25
VCE[V], COLLECT OR -EMITTER VO L TA G E
℃
*10ms
*50ms
S/B limitatio n
*1ms
Thermal
limitation
Rev. A, February 2000
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