Fairchild Semiconductor KSA3010 Datasheet
Audio Power Amplifier
• High Current Capability : IC = - 6A
• High Power Dissipation
•Wide S.O.A
• Complement to KSC4010
KSA3010
KSA3010
1
1.Base 2.Collector 3.Emitter
TO-3P
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Characteristic Ratings Units
V
V
V
I
I
P
T
T
CBO
CEO
EBO
C
CP
C
J
STG
Collector-Base Voltage -120 V
Collector-Emitter Voltage -120 V
Emitter-Base Voltage -5 V
Collector Current (DC) -6 A
Collector Current (Pulse) -12 A
Collector Dissipation (TC=25°C) 60 W
Junction Temperature 150 °C
Storage Temperature - 50 ~ 150 °C
Electrical Characteristics
Symbol Characteristic Test Condition Min. Typ. Max. Units
BV
Collector-Emitter Breakdown Voltage IC= -5A, IB= 0 -120 - - V
CEO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -0.5A - - -2.5 V
V
CE
(on) Base-Emitter O N Voltage VCE= -5V, IC= -5A - - -1.5 V
V
BE
f
T
C
ob
Collector Cut-off Current VCB= -120V, IE= 0 - - -10 µA
Emitter Cut-off Current VEB= -5V, IC= 0 - - -10 µA
DC Current Gain VCE= -5V, IC= -1A, 55 - 160
Current Gain Bandwidth Product VCE= -5V, IC= -1A - 30 - MHz
Output Capacitance VCB=-10V, IE=0, f=1MHz - 180 - pF
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O
h
FE
©2001 Fairchild Semiconductor Corporation Rev. B1, Septmeber 2001
55 ~ 110 80 ~ 160
Typical Characteristics
KSA3010
10
9
8
7
6
5
4
3
2
(A), COLLECTOR CRRENT
C
I
1
0
012345678910
=-200mA
I
B
I
=-180mA
B
=-160mA
I
B
=-140mA
I
B
=-120mA
I
B
IB=-100mA
IB=-80mA
IB=-60mA
IB=-40mA
IB=-20mA
VCE(V), COLLECTOR EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
10
1
0.1
(sat), SATURATI ON VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC(A), COLLECTOR CURRENT
TC=100
℃
℃
TC=25
IC=10I
3
10
℃
TC=100
2
10
, DC CURRENT GAIN
FE
h
1
10
0.1 1 10
TC=25
℃
VCE=5V
IC(A), COLLECTOR CURRENT
B
10
9
8
7
6
5
4
3
2
(A), COLLECTOR CURRENT
C
I
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
TC=100
℃
TC=25
℃
VCE=-5V
VBE(V), BASE EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
-100
IC MAX. (Pulse)
-10
IC MAX. (DC)
-1
-0.1
[A], COLLECTOR CURRENT
C
I
*SINGLE NONREPETITIVE
PULSE TC=25[oC]
-0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
100ms
DC
10ms
MAX
CEO
V
100
90
80
70
60
50
40
30
(W), POWER DISSIPATION
20
C
P
10
0
0 255075100125150175
TC(℃), CASE TEMPERATURE
Rev. B1, Septmeber 2001
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