Fairchild Semiconductor KSA2690A, KSA2690 Datasheet
©2000 Fairchild Semiconductor International Rev. A, February 2000
KSC2690/2690A
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
TC=25°C unless otherwise noted
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
TC=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classificntion
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: KSC2690
: KSC2690A
120
160
V
V
V
CEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
120
160
V
V
VEBO
Emitter-Base Voltage 5 V
IC
Collector Current (DC) 1.2 A
ICP
*Collector Current (Pulse) 2.5 A
IB
Base Current(DC) 0.3 A
PC
Collector Dissipation (Ta=25°C) 1.2 W
P
C
Collector Dissipation (TC=25°C) 20 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 120V, IE = 0 1 µA
I
EBO
Emitter Cut-off Current V
EB
= 3V, IC= 0 1 µA
h
FE1
h
FE2
* DC Current Gain V
CE
= 5V, IC = 5mA
V
CE
= 5V, IC = 0.3A
3560105
140 320
V
CE
(sat) * Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.4 0.7 V
V
BE
(sat) * Base-Em itter Saturation Voltage IC = 1A, IB = 0.2A 1 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, IC = 0.2A 155 MHz
C
ob
Output Capacitance V
CB
=10V, IE =0, f = 1MHz 19 pF
Classification R O Y
h
FE2
60 ~ 120 100 ~ 200 160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
KSC2690/2690A
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
0 1020304050607080
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
IB=0mA
IB=1mA
IB=2mA
IB=3mA
IB=4mA
IB=5mA
IB=6mA
IB=7mA
IB=8mA
IB=9mA
IB=10mA
Pulse Test
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1E-3 0.01 0.1 1 10
1
10
100
1000
VCE = 5V
Pulse Test
0.001
h
FE
, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
1E-3 0.01 0.1 1 10
0.01
0.1
1
10
IC = 5 I
B
Pulse Test
VCE(sat)
VBE(sat)
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
1
10
100
1000
f = 1MHz
I
E
= 0
C
ob
[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1
1
10
100
1000
VCE = 5V
Pulse Test
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
KSC2690A
V
CEO
MAX
KSC2690 V
CEO
MAX
Dissipation
Limited
PW = 100us
1ms
10ms
DC (PW = 50ms)
S/b Limited
IC(max) Pulse
IC(max) DC
I
C
[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
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