Fairchild Semiconductor KSA1150 Datasheet
Low Frequency Power Amplifier
• Collector Dissipation : PC = 300mW
• Complement to KSC2710
KSA1150
KSA1150
1
1.Emitter 2. Collector 3. Base
TO-92S
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
CBO
Collector-Emitter Voltage -20 V
V
CEO
V
EBO
I
C
* Collector Current (Pulse) -700 mA
I
CP
P
C
T
J
T
STG
* PW≤350ms, Duty cycle≤50%
Collector-Base Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current (DC) -500 mA
Collector Power Dissipation 300 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
Collector-Base Breakdown Voltage IC= -100µA, IE=0 -40 V
CBO
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 V
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 -0.4 V
V
CE
(sat) * Base- Em itter Saturation Voltage IC= -500mA, IB= -50mA -1.0 -1.3 V
V
BE
* Pulse Test: PW≤350µs, Duty cycle≤2%
Emitter-Base Breakdown Voltage IE= -100µA, IC=0 -5 V
Collector Cut-off Current VCB= -25V, IE=0 -100 nA
Emitter Cut-off Current VEB= -3V, IC=0 -100 nA
* DC Current Gain VCE= -1V, IC= -100mA 40 400
Ta=25°C unless otherwise noted
Ta=25°C unless otherwise noted
hFE Classification
Classification R O Y G
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400
Typical Characteristics
KSA1150
-500
-450
-400
-350
-300
-250
-200
-150
-100
[mA], COLLECTOR CURRENT
C
I
-50
0
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
IB = -1.6mA
IB = -1.4mA
IB = -1.2mA
IB = -1.0mA
IB = -0.8mA
IB = -0.6mA
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
IC=10I
B
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
VBE(sat)
VCE(sat)
IB = -0.4mA
IB = -0.2mA
1000
VCE=-1V
100
, DC CURRENT GAIN
FE
h
10
-1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
-1000
VCE=-1V
-100
-10
[mA], COLLECTOR CURRENT
C
I
(sat)[V], V
-0.01
BE
-1 -10 -100 -1000
V
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
10
[pF], CAPACITANCE
ob
C
1
-1 -10
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
-1
-0.0 -0.2 -0 .4 -0.6 -0.8 -1.0 -1.2
VBE(sat)[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
f=1MHz
IE=0
Rev. A2, September 2002
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