Fairchild Semiconductor KSA1142 Datasheet
KSA1142
Audio Frequency Power Amplifier
High Freqency Power Amplifier
• Complement to KSC2682
KSA1142
1
TO-126
1. Emitter 2.Collector 3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Ratings Units
V
V
V
I
P
P
T
T
CBO
CEO
EBO
C
C
C
J
STG
Collector-Base Voltage - 180 V
Collector-Emitter Voltage - 180 V
Emitter-Base Voltage - 5 V
Collector Current - 100 mA
Collector Dissipation (Ta=25°C) 1.2 W
Collector Dissipation (TC=25°C) 8 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
h
FE1
h
FE2
V
(sat) * Collector-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.16 - 0.5 V
CE
(sat) * Base-Emitter Saturation Voltage IC = - 50mA, IB = - 5mA - 0.8 - 1.5 V
V
BE
f
T
C
ob
NF Noise Figure V
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pu lsed
Collector Cut-off Current V
Emitter Cut-off Current V
* DC Current Gain V
Current Gain Bandwidth Product V
Output Capacitance V
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
= - 180V, IE = 0 - 1 µA
CB
= - 3V, IC = 0 - 1 µA
EB
= - 5V, IC = - 1mA
CE
V
= - 5V, IC = - 10mA
CE
= - 10V , IC = - 20mA 180 MHz
CE
= - 10V , IE = 0, f=1MHz 4.5 7 pF
CB
= - 10V , IC = - 1mA
CE
= 10kΩ, f = 1MHz
R
S
90
100
200
200 320
4dB
hFE Classification
Classification O Y
h
FE2
©2000 Fairchild Semiconductor International Rev. A, February 2000
100 ~ 200 160 ~ 320
Typical Characteristics
KSA1142
-160
-140
-120
IB = -500㎂IB = -450
-100
-80
-60
-40
Ic[mA], COLLECTOR CURRENT
-20
0
0 -20 -40 -60 -80 -100 -120 -140 -160
㎂
IB = -400
= -300
I
B
= -250
I
B
= -200
I
B
= -150
I
B
IB = -100
IB = -50
IB = 0
㎂
IB = -350
㎂
㎂
㎂
㎂
㎂
㎂
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic Figure 2. DC current Gain
-10
-1
-0.1
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
-0.01
0.1 1 10 100
VBE(sat)
VCE(sat)
IC[mA], COLLECTOR CURRENT
Pulse Test
㎂
IC = 10 I
Pulse Test
1000
VCE = -5V
Pulse Test
100
10
, DC CURRENT GAIN
FE
h
1
-0.1 -1 -10 -100
IC[A], COLLECTOR CURRENT
100
B
C
ib
10
(PF),CAPACITANCE
ib
(PF)C
ob
C
1
-1 -10 -100 -1000
f=1.0MHz
=0(COB)
I
E
=0(CIB)
I
E
C
ob
VCB(v), COLLECTOR-BASE VOLTAGE
(v), EMITTER-BASE VOLTAGE
V
CB
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
-1 -10 -100
(MHz), CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Figure 4. Collector Output Capacitance
-1000
VCE = -10V
IC (DC) Max.
-100
-10
[mA], COLLECTOR CURRENT
C
I
-1
-1 -10 -100 -1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Limited
Dissipation
10ms
DC (50ms)
Limited
PW=1ms
S/b
MAX.
CEO
V
Rev. A, February 2000
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