Fairchild Semiconductor KA2S0880 Datasheet
SPS KA2S0880
SPS
The SPS product family is specially designed for an off line
SMPS with minimal external component. The SPS consist of
high voltage Power SenseFET and current mode PWM IC.
Included control IC features a tr-immed oscillator, under
voltage lock out, leading edge blanking, optimized gate turnon/turn-off driver, thermal shut down protection, over voltage
protection, and temperature compensated precision current
source for loop compensation and fault protection circuitry.
Compared to discrete MOSFET and controller or RCC
switching converter solution, a SPS can reduce total
component count, design size, weight and at the same time
increase efficiency, productivity and system reliability. It has
a basic platform well suited for cost effective monitor power
supply.
TO-3P-5L
1.DRAIN 2. GND 3. VCC 4. FB 5. Sync
FEATURES
• Wide operating frequency range up to 150kHz
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• External sync terminal
• Latch up Mode
BLOCK DIAGRAM
#3 V
CC
32V
#5 Sync
5V
#4 FB
2µA
7.5V
25V
−
+
6.4V
2.5R
1mA
+
−
+
−
1R
9V
Thermal S/D
OVER VOLTAGE S/D
Vref
OSC
−
+
5V
ORDERING INFORMATION
Device Package Rating Topr (°°C)
KA2S0880 TO-3P-5L 800V, 8A −25°C to +85°C
Internal
bias
Good
logic
S
Q
R
L.E.B
0.1V
S
Q
R
Power on reset
#1 DRAIN
SFET
#2 GND
1999 Fairchild Semiconductor Corporation
Rev. B
1
KA2S0880 SPS
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Value Unit
Drain-source (GND) voltage
Drain-Gate voltage (RGS=1MΩ) V
Gate-source (GND) voltage V
Drain current pulsed
(2)
Single pulsed avalanche energy
Avalanche current
(4)
Continuous drain current (TC=25°C) I
Continuous drain current (TC=100°C) I
Supply voltage V
Analog input voltage range V
Total power dissipation PD (watt H/S) 190 W
(1)
(3)
V
I
E
I
DSS
DGR
GS
DM
AS
AS
D
D
CC
FB
800 V
800 V
±30 V
32.0 A
810 mJ
25 A
8.0 A
5.6 A
30 V
−0.3 to V
SD
DC
DC
DC
V
Derating 1.54 W/°C
Operating temperature T
Storage temperature T
NOTES:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, VDD=50V, RG=25Ω, starting Tj=25°C
4. L=13uH, VDD=330V, Tj=25°C
OPR
STG
−25 to +85 °C
−55 to +150 °C
2
SPS KA2S0880
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain-source breakdown voltage BV
Zero gate voltage drain current I
DSS
DSS
VGS=0V, ID=50µA 800 − − V
VDS=Max., Rating, VGS=0V − − 50 µA
VDS=0.8Max., Rating,
− − 200 µA
VGS=0V, TC=125°C
(note)
(note)
R
DS(ON)
VGS=10V, ID=5.0A − 1.2 1.5 Ω
gfs VDS=15V, ID=5.0A 1.5 2.5 − mho
− 2460 − pF
f=1MHz
Static drain-source on resistance
Forward transconductance
Input capacitance Ciss VGS=0V, VDS=25V,
Output capacitance Coss − 210 −
Reverse transfer capacitance Crss − 64 −
Turn on delay time td(on) VDD=0.5BV
Rise time tr − 95 200
Turn off delay time td(off) − 150 450
Fall time tf − 60 150
Total gate charge
Qg VGS=10V, ID=8.0A,
(gate-source+gate-drain)
Gate-source charge Qgs − 20 −
Gate-drain (Miller) charge Qgd − 70 −
(MOSFET switching
time are essentially
independent of
operating temperature)
VDS=0.5BV
switching time are
essentially independent of
operating temperature)
, ID=8.0A
DSS
(MOSFET
DSS
− − 90 nS
− − 150 nC
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
3
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