Fairchild Semiconductor KA1M0965R Datasheet
KA1M0965R
Fairchi ld Pow er Sw itch( FP S)
www.fairchildsemi.com
Features
• Precision Fixed Operating Frequency (67kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
•Auto Restart
•Soft Start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or R
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1
1. DRAIN 2. GND 3. V
switching converter solution, a Fairchild
CC
4. FB 5. S/S
CC
Internal Block Diagram
#3 V
CC
32V
#5 Soft Start
5V
#4 FB
©2003 Fairchild Semiconductor Corporation
µ
5
7.5V
25V
A
2.5R
1mA
1R
5V
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#1 DRAIN
SFET
Q
#2 GND
Rev.1.0.3
KA1M0965R
Absolute Maximum Ratings
Parameter Symbol Value Unit
Drain Gate Voltage (R
Gate-Source (GND) Voltage V
Drain Current Pulsed
Single Pulsed Avalanche Energy
Continuous Drain Current (T
Continuous Drain Current (TC=100°C) I
Maximum Supply Voltage V
Input Voltage Range V
Total Power Dissipation
Operating Ambient Temperature T
Storage Temperature T
Notes:
1. T
= 25°C to 150°C
j
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 20mH, V
= 50V, RG = 27Ω, starting Tj = 25°C
DD
=1MΩ)V
GS
(2)
(3)
=25°C) I
C
DGR
GS
I
DM
E
AS
D
D
CC,MAX
FB
P
D
Darting 1.33 W/°C
A
STG
650 V
±30 V
36.0 A
950 mJ
9.0 A
5.8 A
30 V
-0.3 to V
SD
170 W
-25 to +85 °C
-55 to +150 °C
DC
DC
DC
V
2
KA1M0965R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Static Drain-Source on Resistance
Forward Transconductance
(Note)
(Note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=15V, ID=4.5A 5.0 - - S
Input Capacitance Ciss
Reverse Transfer Capacitance Crss - 78 Turn on Delay Time t
d(on)
Rise Time tr - 23 55
Turn Off Delay Time t
d(off)
Fall Time tf - 30 70
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
Gate-Source Charge Qgs - 12 Gate-Drain (Miller) Charge Qgd - 35.4 -
VGS=0V, ID=50µA 650 - - V
VDS=Max., Rating, VGS=0V - - 50 µA
V
=0.8Max., Rating,
DS
V
=0V, TC=125°C
GS
- - 200 µA
=10V, ID=4.5A - 0.96 1.2
- 1750 -
V
=0V, VDS=25V,
GS
f=1MHz
VDD=0.5BV
DSS
, ID=9.0A
-2050
(MOSFET switching
time are essentially
independent of
- 85 180
operating temperature)
V
=10V, ID=9.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
-7475
switching time are essentially
independent of
operating temperature)
Ω
pFOutput Capacitance Coss - 190 -
nS
nC
Note:
1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
2.
1
S
--- -=
R
3
Loading...