Fairchild Semiconductor KA1M0880B Datasheet
©2001 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.2
Features
• Precision fixed operating frequency
• KA1L0880B(50KHz),KA1M0880B(67KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lock out
• Internal high voltage sense FET
• Latch up mode
•Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
CC
switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. V
CC
4. FB 5. S/S
1
Internal Block Diagram
#3 V
CC
32V
5
µ
A
5V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
25V
Thermal S/D
S
R
Q
Power on reset
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#1 DRAIN
#2 GND
#4 FB
#5 Soft Start
9V
KA1L0880B/KA1M0880B
Fairchild Power S witch(FPS)
KA1L0880B/KA1M0880B
2
Absolute Maximum Ratings
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, V
DD
=50V, RG=25Ω, starting Tj=25°C
4. L=13µH, starting Tj=25°C
Parameter Symbol Value Unit
Maximum Drain voltage
(1)
V
D,Max
800 V
Drain-Gate voltage (R
GS
=1MΩ)V
DGR
800 V
Gate-source (GND) voltage V
GS
±30 V
Drain current pulsed
(2)
I
DM
32.0 A
DC
Single pulsed avalanche energy
(3)
E
AS
810 mJ
Avalanche current
(4)
I
AS
15 A
Continuous drain current (T
C
=25°C) I
D
8.0 A
DC
Continuous drain current (TC=100°C) I
D
5.6 A
DC
Maximum Supply voltage V
CC,MAX
30 V
Input voltage range V
FB
−0.3 to V
SD
V
Total power dissipation
P
D
190 W
Derating 1.54 W/°C
Operating ambient temperature T
A
−25 to +85 °C
Storage temperature T
STG
−55 to +150 °C
KA1L0880B/KA1M0880B
3
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Note:
Pulse test: P ulse width ≤ 300µS, duty cycle ≤ 2%
Parameter Symbol Condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
DSS
VGS=0V, ID=50µA 800 - - V
Zero gate voltage drain current I
DSS
VDS=Max., Rating,
V
GS
=0V
--50µA
V
DS
=0.8Max., Rating,
V
GS
=0V, TC=125°C
- - 200 µA
Static drain source on resistance
(note)
R
DS(ON)VGS
=10V, ID=5.0A - 1.2 1.5 Ω
Forward transconductance
(note)
gfs VDS=15V, ID=5.0A 1.5 2.5 - S
Input capacitance Ciss
V
GS
=0V, VDS=25V,
f=1MHz
- 2460 pFOutput capacitance Coss - 210 -
Reverse transfer capacitance Crss - 64 Turn on delay time t
d(on)
VDD=0.5BV
DSS
, ID=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
--90
nS
Rise time tr - 95 200
Turn off delay time t
d(off)
- 150 450
Fall time tf - 60 150
Total gate charge
(gate-source+gate-drain)
Qg
V
GS
=10V, ID=8.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
- - 150
nC
Gate source charge Qgs - 20 Gate drain (Miller) charge Qgd - 70 -
S
1
R
--- -=
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