Fairchild Semiconductor KA1M0680RB, KA1H0680B Datasheet
KA1M0680B/KA1M0680RB/
KA1H0680B/KA1H0680RFB
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision fixed operating frequency
• KA1M0680B,KA1M0680RB (67K H z)
• KA1H0680B,KA1H0680RFB (100KHz)
• Pulse by pulse over current limiting
• Over load protection
• Over voltage protection (Min. 23V)
• Internal thermal shutdown function
• Under voltage lock out
• Internal high voltage sense FET
• Latch up mode (KA1M0680B,KA1H0680B)
• Auto restart (KA1M0680RB,KA1H0680RFB)
• Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of high
voltage power SenseFET and current mode PWM controller IC.
PWM controller features integrated fixed oscillator, under
voltage lock out, leading edge blanking, optimized gate turn-on/
turn-off driver , thermal shut down protection, over voltage
protection, temperature compensated precision current sources
for loop compensation and fault protection circuit. compared to
discrete MOSFET and controller or R
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, weight and at the same time
increase & efficiency, productivity, and system reliability. It has
a basic platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-3P-5L
1
1.DRAIN 2.GND 3.V
TO-3PF-5L
1
4.FB 5.Soft Start
CC
switching converter
CC
Internal Block Diagram
#3 V
CC
32V
#5 Soft Start
5V
#4 FB
©2001 Fairchild Semiconductor Corporation
µ
5
7.5V
25V
A
2.5R
1mA
1R
9V
+
−
+
−
Thermal S/D
OVER VOLTAGE S/D
OSC
−
+
5V
Vref
L.E.B
0.1V
Good
logic
S
R
Internal
bias
Q
S
R
Power on reset
#1 DRAIN
SFET
Q
#2 GND
Rev.1.0.2
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Absolute Maximum Ratings
Parameter Symbol Value Unit
Maximum Drain voltage
Drain Gate voltage (R
(1)
=1MΩ)V
GS
Gate source (GND) voltage V
(4)
(2)
(3)
=25°C) I
C
Drain current pulsed
Single pulsed avalanche energy
Avalanche current
Continuous drain current (T
Continuous drain current (TC=100°C) I
Maximum Supply voltage V
Input voltage range V
Total power dissipation
Operating ambient temperature T
Storage temperature T
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=24mH, V
4. L=13µH, starting Tj=25°C
=50V, RG=25Ω, starting Tj=25°C
DD
V
D,MAX
DGR
GS
I
DM
E
AS
I
AS
D
D
CC,MAX
FB
P
D
800 V
800 V
±30 V
24.0 A
455 mJ
16 A
6.0 A
4.0 A
30 V
−0.3 to V
SD
150 W
Derating 1.21 W/°C
A
STG
−25 to +85 °C
−55 to +150 °C
DC
DC
DC
V
2
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
Drain source breakdown voltage BV
Zero gate voltage drain current I
Static drain source on resistance
Forward transconductance
(note)
(note)
DSS
DSS
R
DS(ON)VGS
gfs VDS=15V, ID=4.0A 1.5 2.5 - S
Input capacitance Ciss
Reverse transfer capacitance Crss - 42 Turn on delay time t
d(on)
Rise time tr - 150 Turn off delay time t
d(off)
Fall time tf - 130 Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge Qgs - 16 Gate drain (Miller) charge Qgd - 27 -
VGS=0V, ID=50µA 800 - - V
VDS=Max., Rating,
V
=0V
GS
=0.8Max., Rating,
V
DS
V
=0V, TC=125°C
GS
--50µA
- - 200 µA
=10V, ID=4.0A - 1.6 2.0 Ω
- 1600 -
=0V, VDS=25V,
V
GS
f=1MHz
VDD=0.5BV
DSS
, ID=6.0A
-60(MOSFET switchin g
time are essentially
independent of
- 300 operating temperature)
V
=10V, ID=6.0A,
V
GS
DS
=0.5BV
(MOSFET
DSS
-70switching time are
essentially independent of
operating temperature)
pFOutput capacitance Coss - 140 -
nS
nC
Note:
Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
1
S
--- -=
R
3
KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB
Electrical Characteristics (CONTROL part)
(Ta=25°C unless otherwise specified)
Parameter Symbol Condition Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage V
Stop threshold voltage V
START
STOP
After turn on 9 10 11 V
OSCILLATOR SECTION
KA1M0680B 61 67 73
Initial accuracy F
OSC
KA1M0680RB 61 67 73
KA1H0680B 90 100 110
KA1H0680RFB 90 100 110
(2)
Frequency change with temperature
∆F/∆T −25°C ≤ Ta ≤ +85°C-±5 ±10 %
KA1M0680B 74 77 80
Maximum duty cycle Dmax
KA1M0680RB 74 77 80
KA1H0680B 64 67 70
KA1H0680RFB 64 67 70
FEEDBACK SECTION
Feedback source current I
Shutdown Feedback voltage V
FB
SD
Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5V ≤ Vfb ≤ V
SOFT START SECTION
Soft Start Voltage V
Soft Start Current I
SS
SS
V
=2V 4.7 5.0 5.3 V
FB
Sync & S/S=GND 0.8 1.0 1.2 mA
REFERENCE SECTION
Output voltage
Temperature Stability
(1)
(1)(2)
Vref Ta=25°C 4.805.005.20 V
Vref/∆T −25°C ≤ Ta ≤ +85°C-0.30.6mV/°C
CURRENT LIMIT (SELF-PROTECTION) SECTION
Peak Current Limit I
OVER
Max. inductor current 3.52 4.00 4.48 A
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
Over voltage protection voltage V
T
SD
OVP
TOTAL DEVICE SECTION
Start Up current I
Operating supply current
(control part only)
V
zener voltage V
CC
START
I
OP
Z
VCC=14V 0.1 0.3 0.45 mA
Ta=25°C 6 12 18 mA
ICC=20mA 30 32.5 35 V
- 141516 V
-6.97.58.1V
- 140 160 - °C
- 232528 V
4.0 5.0 6.0 µA
SD
kHz
%
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
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