Fairchild Semiconductor J110, J109, J108 Datasheet
J108
J109
J110
J108 / J109 / J110
Discrete POWER & Signal
Technologies
G
S
D
TO-92
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
P
D
R
θ
JC
R
θ
JA
Drain-Gate Voltage 25 V
Ga t e- Sou r ce Voltage - 25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
J108 / J109 / J110
Total De vice Dissipat i on
Derate above 25°C
Thermal Resistance, Junction to Case 125 °C/W
Thermal Resistance, Junction to Ambient 357
350
2.8
mW
mW/°C
°C/W
1997 Fairchild Semiconductor Corporation
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
V
(BR)GSS
I
GSS
V
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 15 V, VDS = 0
Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA J108
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J108
Drain- So ur ce On Resistan ce VDS ≤ 0.1 V, VGS = 0 J108
= - 10 µA, VDS = 0
I
G
= - 15 V, VDS = 0, TA = 100°C
V
GS
J109
J110
J109
J110
J109
J110
- 25 V
- 3.0
- 200
- 3.0
- 2.0
- 0.5
- 10
- 6.0
- 4.0
80
40
10
8.0
12
18
nA
nA
V
V
V
mA
mA
mA
Ω
Ω
Ω
J108 / J109 / J110
J108 / J109 / J110
SMALL SIGNAL CHARACTERISTICS
C
C
C
C
dg(on)
sg(off)
dg(off)
sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance VDS = 0, VGS = - 10 V, f = 1.0 MHz 15 pF
Source-Gat e O ff C apac it anc e VDS = 0, VGS = - 10 V, f = 1.0 MHz 15 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Common Drain-Source
100
V = 0 V
GS
80
60
40
20
D
I - DRAIN CURRENT (mA)
0
0 0.4 0.8 1.2 1.6 2
V - DRAIN-SOURCE VOLTAGE (V)
DS
- 4.0 V
- 5.0 V
- 2.0 V
- 1.0 V
TYP V = - 5.0 V
- 3.0 V
T = 25°C
A
GS(off)
VDS = 0, VGS = 0, f = 1.0 MHz 85 pF
)
ΩΩ
(
100
DS
r - DRAIN "ON" RESISTANCE
Parameter Interactions
I @ V = 5.0V, V = 0 PULSED
DSS
r @ V = 100mV, V = 0
DS
50
V @ V = 5.0V, I = 3.0 nA
GS(off)
10
5
_____
0.1 0.5 1 5 10
V - GATE CUTOFF VOLTAGE (V)
GS (OFF)
GS
DS
DS
DS
GS
D
r
DS
I
DSS
1,000
500
100
50
10
I - DRAIN CURRENT (mA)
DSS
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