Fairchild Semiconductor J106, J105, J107 Datasheet
Discrete POWER & Signal
Technologies
J105 / J106 / J107 / JFTJ105
J105
JFTJ105
J106
J107
G
D
G
S
D
TO-92
SOT-223
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
DG
V
GS
I
GF
TJ, T
stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Drain-Gate Voltage 25 V
Ga t e- Sour c e V oltag e - 25 V
Forward Gate Current 10 mA
Operating and Storage Junction Temperature Range -55 to +150 °C
G
S
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characte rist i c Max Uni ts
J105 / J106 / J107
P
D
R
θ
JC
R
θ
JA
1997 Fairchild Semiconductor Corporation
Total Device Dissipation
Derate above 25°C
Thermal Resista nce , Junction to Case 125
Thermal Resista nce , Junction to Am bi ent 357 °C/W
350
2.8
mW
mW/°C
°C/W
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
OFF CHARACTERISTICS
- 25 V
- 3.0
- 200
- 4.5
- 2.0
- 0.5
- 10
- 6.0
- 4.5
500
200
100
3.0
6.0
8.0
nA
nA
V
V
V
mA
mA
mA
Ω
Ω
Ω
I
V
GSS
V
(BR)GSS
GS(off)
Gate-Source Breakdown Voltage
Gate Reverse Current VGS = - 15 V, VDS = 0
Gate-Source Cutoff Voltage VDS = 15 V, ID = 10 nA J105
ON CHARACTERISTICS
I
DSS
r
DS(on)
Zero-Gate Voltage Drain Current* VDS = 15 V, IGS = 0 J105
Drain- So ur ce On Resistance VDS ≤ 0.1 V, VGS = 0 J105
= - 10 µA, VDS = 0
I
G
= - 15 V, VDS = 0, TA = 100°C
V
GS
J106
J107
J106
J107
J106
J107
J105 / J106 / J107 / JFTJ105
J105 / J106 / J107 / NDSJ105
SMALL SIGNAL CHARACTERISTICS
C
C
C
C
dg(on)
sg(on)
dg(off)
sg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF
Sourc e- Gate O ff C apacit ance VDS = 0, VGS = 10 V, f = 1.0 MHz 35 pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Typical Characteristics
Common Dra in-Source
Characteristics
200
150
100
50
D
I - DRAIN CURRENT (mA)
0
V = 0 V
GS
00.511.52
V - DRAIN-SOURCE VOLTAGE(V)
DS
-1V
-2V
-3V
-4V
-5V
T = + 25 C
A
TYP V = -5V
GS(OFF)
VDS = 0, VGS = 10 V, f = 1.0 MHz 160 pF
Common Dr a in-S o urc e
Characteristics
50
V = 0 V
GS
40
30
20
0
10
D
I - DRAIN CURR ENT (mA )
0
012345
V - DRAIN- SOURCE VOLTAGE( V)
DS
- 0.1V
- 0.2V
- 0.3V
-0. 4V
- 0.5V
TYP V = -0.7V
T = + 25 C
A
GS(OFF)
0
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