Fairchild Semiconductor ISL9V5036P3, ISL9V5036S3S Datasheet
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
September 2002
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D² Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443
Package
JEDEC TO-263AB
D²-Pak
G
E
COLLECTOR
(FLANGE)
Device Maximum Ratings T
JEDEC TO-220AB
JEDEC TO-262AA
E
C
G
COLLECTOR
(FLANGE)
= 25°C unless otherwise noted
A
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D-Pak package
• SCIS Energy = 500mJ at T
• Logic Level Gate Drive
= 25oC
J
Symbol
E
C
G
GATE
R
1
R
2
COLLECTOR
EMITTER
Symbol Parameter Ratings Units
BV
BV
E
SCIS25
E
SCIS150
I
C25
I
C110
V
GEM
P
T
T
STG
T
T
CER
ECS
pkg
Collector to Emitter Breakdown Voltage (IC = 1 mA) 390 V
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
At Starting TJ = 25°C, I
At Starting TJ = 150°C, I
= 38.5A, L = 670 µHy 500 mJ
SCIS
= 30A, L = 670 µHy 300 mJ
SCIS
Collector Current Continuous, At TC = 25°C, See Fig 9 46 A
Collector Current Continuous, At TC = 110°C, See Fig 9 31 A
Gate to Emitter Voltage Continuous ±10 V
Power Dissipation Total TC = 25°C 250 W
D
Power Dissipation Derating T
Operating Junction Temperature Range -40 to 175 °C
J
> 25°C 1.67 W/°C
C
Storage Junction Temperature Range -40 to 175 °C
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
L
Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4kV
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
Package Marking and Ordering Information
Device Marking Device Package Tape Width Quantity
V5036S ISL9V5036S3S TO-263AB 24mm 800
V5036P ISL9V5036P3 TO-220AA - V5036S ISL9V5036S3 TO-262AA - -
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BV
BV
BV
BV
I
CER
I
ECS
R
R
Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,
CER
Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,
CES
Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,
ECS
Gate to Emitter Breakdown Voltage I
GES
Collector to Emitter Leakage Current V
Emitter to Collector Leakage Current VEC = 24V , See
Series Gate Resistance - 75 - Ω
1
Gate to Emitter Resistance 10K - 30K Ω
2
= 1KΩ, See Fig. 15
R
G
= -40 to 150°C
T
J
R
= 0, See Fig. 15
G
= -40 to 150°C
T
J
= 25°C
T
C
= ± 2mA ±12 ±14 - V
GES
= 250V,
CER
R
= 1KΩ,
G
See Fig. 11
= 25°C- - 25 µA
T
C
= 150°C- - 1 mA
T
C
TC = 25°C- - 1 mA
Fig. 11
T
= 150°C- - 40 mA
C
330 360 390 V
360 390 420 V
30 - - V
On State Characteristics
V
CE(SAT)
V
CE(SAT)
Collector to Emitter Saturation Voltage IC = 10A,
= 4.0V
V
GE
Collector to Emitter Saturation Voltage IC = 15A,
= 4.5V
V
GE
T
= 25°C,
C
- 1.17 1.60 V
See Fig. 4
T
= 150°C - 1.50 1.80 V
C
Dynamic Characteristics
Q
G(ON)
V
GE(TH)
V
GEP
Switching Characteristics
t
d(ON)R
t
t
d(OFF)L
Gate Charge IC = 10A, VCE = 12V,
Gate to Emitter Threshold Voltage IC = 1.0mA,
Gate to Emitter Plateau Voltage IC = 10A,
Current T urn-On Delay Time-Resistive V
Current Rise Time-Resistive - 2.1 7 µs
rR
Current T urn-Off Delay Time-Inductive V
Current Fall Time-Inductive - 2.8 15 µs
t
fL
SCIS Self Clamped Inductive Switching T
= 5V, See Fig. 14
V
GE
V
= V
CE
GE,
See Fig. 10
= 12V
V
CE
= 14V, RL = 1Ω,
CE
= 5V, RG = 1KΩ
V
GE
T
= 25°C, See Fig. 12
J
= 300V, RL = 46Ω,
CE
= 5V, RG = 1KΩ
V
GE
= 25°C, See Fig. 12
T
J
= 25°C, L = 670 µH,
J
R
= 1KΩ, VGE = 5V, See
G
= 25°C1.3 - 2.2 V
T
C
T
= 150°C0.75 - 1.8 V
C
Fig. 1 & 2
-32-nC
-3.0- V
-0.74µs
- 4.8 15 µs
- - 500 mJ
Thermal Characteristics
R
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
Thermal Resistance Junction-Case T O-263, TO-220 - - 0.6 °C/W
θJC
Typical Characteristics
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
45
40
35
30
25
20
15
10
, INDUCTIVE SWITCHING CURRENT (A)
5
SCIS
I
0
TJ = 150°C
SCIS Curves valid for V
RG = 1KΩ, VGE = 5V,Vdd = 14V
TJ = 25°C
Voltages of <390V
clamp
t
, TIME IN CLAMP (µS)
CLP
350300025010050 150 200
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.10
ICE = 6A
1.05
VGE = 3.7V
1.00
0.95
0.90
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
0.85
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
25-25 17512575-50 0 50 100 150
, JUNCTION TEMPERATURE (°C)
T
J
VGE = 4.0V
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
45
40
35
30
25
20
15
10
, INDUCTIVE SWITCHING CURRENT (A)
5
SCIS
I
0
0102468
TJ = 150°C
SCIS Curves valid for V
RG = 1KΩ, VGE = 5V,Vdd = 14V
Voltages of <390V
clamp
L, INDUCTANCE (mHy)
TJ = 25°C
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.25
ICE = 10A
1.20
1.15
1.10
1.05
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
1.00
VGE = 4.5V
VGE = 5.0V
T
J
VGE = 3.7V
VGE = 8.0V
25-25 17512575-50 0 50 100 150
, JUNCTION TEMPERATURE (°C)
VGE = 4.0V
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
50
VGE = 8.0V
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = - 40°C
Figure 5. Collector Current vs Collector Emitter
On-State Voltage
©2002 Fairchild Semiconductor Corporation ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002
50
VGE = 8.0V
VGE = 5.0V
40
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20
10
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
0
02.01.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TJ = 25°C
Figure 6. Collector Current vs Collector Emitter
On-State Voltage
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