Fairchild Semiconductor HGTG12N60B3 Datasheet

Data Sheet August 2003

HGTG12N60B3

27A, 600V, UFS Series N-Channel IGBTs

This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors . These devices have the high i nput impedance of
a MOSFET and the low on-s tate con ductio n loss of a bi polar
transistor. The much lower on-state voltage drop varies only
moderately between 25

o

C and 150oC.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, pow er su ppl ies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49171.

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG12N60B3 TO-247 G12N60B3

NOTE: When ordering, use the entire part number.

Symbol

C

Features

• 27A, 600V, TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T

• Short Circuit Rating

• Low Conduction Loss

Packaging

JEDEC STYLE TO-247

E

C

G

COLLECTOR

(BOTTOM SIDE METAL)

= 150oC

J

G

E

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1

HGTG12N60B3

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

HGTG12N60B3 UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV

Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Switching Safe Operating Area at T

= 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V

J

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

CES

C25

C110

CM

GES

GEM

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/

Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

ARV

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V

CAUTION: Stresses above those listed in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t

GE

L

pkg

SC
SC

600 V

27 A
12 A

110 A

±20 V
±30 V

104 W

100 mJ

-55 to 150

300
260

5 µs

10 µs

o

C

o

C

o

C

o

C

NOTES:

1. Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RG = 25Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I

CES
ECS

CES

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA T

Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t
Current Rise Time t
Current Turn-Off Delay Time t
Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E

GEP

g(ON)

d(ON)I

rI

d(OFF)I

fI
ON1
ON2
OFF

IC = 250µA, VGE = 0V 600 - - V
IC = -10mA, VGE = 0V 20 - - V
VCE = 600V TC = 25oC - - 250 µA

T

= 150oC--2.0mA

C

= 12A

= 15V

V

GE

IC = 250µA, VCE = V

T

= 25oC-1.62.1V

C

T

= 150oC-1.72.5V

C

GE

4.5 4.9 6.0 V

VGE = ±20V - - ±250 nA

= 150oC, RG = 25Ω, VGE = 15V

J

L = 100µH, V
IC = 12A, VCE = 0.5 BV
IC = 12A

V

= 300V

CE

CE

= 600V

CES

= 15V - 51 60 nC

V

GE

V

= 20V - 68 78 nC

GE

IGBT and Diode at TJ = 25oC

= 12A

I

CE

V

= 480V

CE

= 15V

V

GE

R

= 25Ω

G

L = 1mH
Test Circuit (Figure 17)

96 - - A

-7.3- V

-26- ns

-23- ns

- 150 - ns

-62- ns

- 150 - µJ

- 304 350 µJ

- 250 350 µJ

©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1

HGTG12N60B3

Electrical Specifications T

= 25oC, Unless Otherwise Specified (Continued)

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy (Note 4) E
Turn-On Energy (Note 4) E
Turn-Off Energy (Note 3) E
Thermal Resistance Junction To Case R

rI

fI
ON1
ON2
OFF

θJC

IGBT and Diode at TJ = 150oC

= 12A

I

CE

= 480V

V

CE

V

= 15V

GE

= 25Ω

R

G

L = 1mH
Test Circuit (Figure 17)

NOTES:

3. Turn-Off Energy Loss (E
at the point where the collector current equals zero (I
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

OFF

= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement

CE

4. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
Figure 17.

Typical Performance Curves Unless Otherwise Specified

30

V

25

20

15

10

, DC COLLECTOR CURRENT (A)

5

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE

GE

= 15V

100

90

TJ = 150oC, RG = 25Ω, V

80
70
60
50
40
30
20
10

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

-22- ns

-23- ns

- 280 295 ns

- 112 175 ns

- 165 - µJ

- 500 525 µJ

- 660 800 µJ

--1.2oC/W

is the turn-on loss of the IGBT only. E

ON1

as the IGBT. The diode type is specified in

J

= 15V, L = 100µH

GE

300 400200100 500 600

ON2

700

©2003 Fairchild Semiconductor Corporation HGTG12N60B3 Rev. C1