Fairchild Semiconductor HGTD7N60C3S Datasheet
SEMICONDUCTOR
HGTD7N60C3,
HGTD7N60C3S, HGTP7N60C3
January 1997
Features
• 14A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 140ns at T
= 150oC
J
• Short Circuit Rating
• Low Conduction Loss
Description
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are
MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
between 25
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential, such as: AC and DC motor controls,
power supplies and drivers for solenoids , rela ys and contactors.
PART NUMBER PACKAGE BRAND
HGTD7N60C3 TO-251AA G7N60C
HGTD7N60C3S TO-252AA G7N60C
HGTP7N60C3 TO-220AB G7N60C3
NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in tape and
reel, i.e. HGTD7N60C3S9A.
Formerly Developmental Type TA49115.
o
C and 150oC.
PACKAGING AVAILABILITY
14A, 600V, UFS Series N-Channel IGBTs
Packaging
COLLECTOR
(FLANGE)
GATE
EMITTER
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
JEDEC TO-220AB
EMITTER
COLLECTOR (FLANGE)
JEDEC TO-251AA
EMITTER
JEDEC TO-252AA
G
COLLECTOR
GATE
COLLECTOR
GATE
COLLECTOR
(FLANGE)
C
E
Absolute Maximum Ratings T
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA 40A at 480V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
= 360V, TJ = 125oC, RGE = 50Ω.
CE(PK)
© Harris Corporation 1997
= 25oC, Unless Otherwise Specified
C
3-16
HGTD7N60C3, HGTD7N60C3S
HGTP7N60C3 UNITS
CES
C25
C110
CM
GES
GEM
D
ARV
STG
L
SC
SC
600 V
14 A
7A
56 A
±20 V
±30 V
60 W
100 mJ
-40 to 150
260
1 µs
8 µs
File Number 4141.2
o
C
o
C
HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector-Emitter Breakdown Voltage BV
Emitter-Collector Breakdown Voltage BV
Collector-Emitter Leakage Current I
CES
ECS
CES
IC = 250µA, VGE = 0V 600 - - V
IC = 3mA, VGE= 0V 16 30 - V
VCE = BV
VCE = BV
Collector-Emitter Saturation Voltage V
CE(SAT)IC
= I
C110
VGE = 15V
Gate-Emitter Threshold Voltage V
GE(TH)
IC = 250µA,
VCE = V
Gate-Emitter Leakage Current I
GES
VGE = ±25V - - ±250 nA
Switching SOA SSOA TJ = 150oC
RG = 50Ω
VGE = 15V
L = 1mH
Gate-Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
IC = I
IC = I
C110
C110
VCE = 0.5 BV
CES
CES
,
GE
, VCE = 0.5 BV
,
CES
TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
TC = 25oC - 1.6 2.0 V
TC = 150oC - 1.9 2.4 V
TC = 25oC 3.0 5.0 6.0 V
V
V
= 480V 40 - - A
CE(PK)
= 600V 6 - - A
CE(PK)
CES
-8-V
VGE = 15V - 23 30 nC
VGE = 20V - 30 38 nC
Current Turn-On Delay Time t
Current Rise Time t
D(ON)I
RI
TJ = 150oC
ICE = I
C110
V
= 0.8 BV
CE(PK)
CES
- 8.5 - ns
- 11.5 - ns
VGE = 15V
Current Turn-Off Delay Time t
D(OFF)I
Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R
RG= 50Ω
L = 1.0mH
FI
ON
OFF
θJC
- 350 400 ns
- 140 275 ns
- 165 - µJ
- 600 - µJ
- - 2.1
NOTE:
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true
total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
o
C/W
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
3-17
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