Fairchild Semiconductor HGTD3N60C3S Datasheet

SEMICONDUCTOR

HGTD3N60C3,

HGTD3N60C3S

June 1997

Features

• 6A, 600V at TC = 25oC

• 600V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . 130ns at T

• Short Circuit Rating

• Low Conduction Loss

= 150oC

J

Ordering Information

PART NUMBER PACKAGE BRAND

HGTD3N60C3 TO-251AA G3N60C

HGTD3N60C3S TO-252AA G3N60C

NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in Tape and Reel, i.e.
HGTD3N60C3S9A.

6A, 600V, UFS Series N-Channel IGBTs

Description

The HGTD3N60C3 and HGTD3N60C3S are MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state con­duction loss of a bipolar transistor. The much lower on-state
voltage drop varies only moderately between 25

o

150

C.

The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.

Formerly developmental type TA49113.

Symbol

N-CHANNEL ENHANCEMENT MODE

C

o

C and

G

E

Packaging

JEDEC TO-251AA JEDEC TO-252AA

EMITTER

COLLECTOR

(FLANGE)

HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951

COLLECTOR

GATE

GATE

EMITTER

COLLECTOR
(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright

© Harris Corporation 1997

1

File Number 4139.3

HGTD3N60C3, HGTD3N60C3S

Absolute Maximum Ratings T

= 25oC

C

HGTD3N60C3

HGTD3N60C3S UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV

CES

600 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

C25

C110

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T

= 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . .SSOA 18A at 480V

J

= 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

C

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 W/oC

C

Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T

GES

GEM

ARV

, T

J

STG

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Short Circuit Withstand Time (Note 2) at V

= 10V, Figure 6 . . . . . . . . . . . . . . . . . . . . . . t

GE

CM

D

L

SC

6A
3A

24 A

±20 V
±30 V

33 W

100 mJ

-40 to 150
260

8 µs

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. V

Electrical Specifications T

= 360V, TJ = 125oC, RGE = 82Ω.

CE(PK)

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I

CES
ECS

CES

IC = 250µA, VGE = 0V 600 - - V
IC = 3mA, VGE= 0V 16 30 - V
VCE = BV

CES

TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA

Collector to Emitter Saturation Voltage V

Gate to Emitter Threshold Voltage V

Gate to Emitter Leakage Current I

CE(SAT)IC

GE(TH)

GES

Switching SOA SSOA TJ = 150oC

= I

C110

VGE = 15V

IC = 250µA,
VCE = V

GE

,

TC = 25oC - 1.65 2.0 V
TC = 150oC - 1.85 2.2 V
TC = 25oC 3.0 5.5 6.0 V

VGE = ±25V - - ±250 nA

RG = 82Ω
VGE = 15V

V
V

= 480V 18 - - A

CE(PK)

= 600V 2 - - A

CE(PK)

L = 1mH
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q

Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 3) E
Thermal Resistance R

GEP

g(ON)

rI

fI

ON

OFF

θJC

IC = I

IC = I

, VCE = 0.5 BV

C110

,

C110

VCE = 0.5 BV

TJ = 150oC

ICE = I

C110

V

= 0.8 BV

CE(PK)

VGE = 15V

RG= 82Ω

L = 1mH

CES

- 8.3 - V

VGE = 15V - 10.8 13.5 nC

CES

VGE = 20V - 13.8 17.3 nC

-5-ns

CES

-10-ns

- 325 400 ns

- 130 275 ns

-85-µJ

- 245 - µJ

- - 3.75

NOTE:

3. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the collector current equals zero (ICE = 0A). The HGTD3N60C3 and HGTD3N60C3S were tested per JEDEC
standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off
Energy Loss. Turn-On losses include diode losses.

o

C

o

C

o

C/W

2

Typical Performance Curves

HGTD3N60C3, HGTD3N60C3S

20

DUTY CYCLE <0.5%, V

18

PULSE DURATION = 250µs

16
14
12
10

TC = 150oC

8

T

= 25oC

C

6

TC = -40oC

4
2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

4

6 8 10 12

VGE, GATE TO EMITTER VOLTAGE (V)

CE

= 10V

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS

20

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V

18
16

14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

CE

0

I

0123 45

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

= 10V

GE

TC = -40oC

TC = 150oC

TC = 25oC

20
18
16
14
12
10

8
6
4

, COLLECTOR TO EMITTER CURRENT (A)

2

CE

I

14

0

20
18
16
14
12
10

8
6
4
2

, COLLECTOR TO EMITTER CURRENT (A)

0

CE

I

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, T

VGE = 15V

0246810

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V

TC = -40oC

012345

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

12V

= 25oC

C

10V

9.0V

8.5V

8.0V

7.5V

7.0V

TC = 25oC

TC = 150oC

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

7

V

= 15V

GE

6

5

4

3

2

, DC COLLECTOR CURRENT (A)

1

CE

I

0

25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A

14

VCE = 360V, RGE = 82Ω, TJ = 125oC

12

10

8

6

4

2

, SHORT CIRCUIT WITHSTAND TIME (µS)

SC

0

t

10 11 12

t

SC

V

, GATE TO EMITTER VOLTAGE (V)

GE

FIGURE 6. SHORT CIRCUIT WITHSTAND TIME

I

SC

14 1513

70

60

50

40

30

20

10

0

FUNCTION OF CASE TEMPERA TURE

3

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I