Fairchild Semiconductor HGTD1N120BNS Datasheet
E
C
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(FLANGE)
G
T
HGTD1N120BNS, HGTP1N120BN
Data Sheet January 2001
5.3A, 1200V, NPT Series N-Channel IGBT
The HGTD1N120BNS and HGTP1N120BN are N on- P unch
hrough (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49316.
Ordering Information
PART NUMBER PACKAGE BRAND
HGTD1N120BNS TO-252AA 1N120B
HGTP1N120BN TO-220AB 1N120BN
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA in tape and reel, i.e. HGTD1N120BNS9A
Features
• 5.3A, 1200V, T
• 1200V Switching SOA Capability
• Typical E
OFF
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.fairchildsemi.com
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
o
= 25
C
C
. . . . . . . . . . . . . . . . . . 120 µ J at T
Packaging
JEDEC TO-220AB
= 150
J
o
C
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
JEDEC TO-252AA
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
±
±
8 µ
13 µ
µ
µ
±
HGTD1N120BNS, HGTP1N120BN
Absolute Maximum Ratings
o
T
= 25
C, Unless Otherwise Specified
C
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
1200 V
Collector Current Continuous
At T
At T
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Switching Safe Operating Area at T
Power Dissipation Total at T
Power Dissipation Derating T
Forward Voltage Avalanche Energy (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
o
= 110
C
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
= 150
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 6A at 1200V
J
o
= 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
o
> 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.476 W/
C
C25
C110
CM
GES
GEM
D
AV
, T
J
STG
5.3 A
2.7 A
6A
20 V
30 V
60 W
o
C
10 mJ
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Short Circuit Withstand Time (Note 3) at V
Short Circuit Withstand Time (Note 3) at V
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
= 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
= 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
GE
L
pkg
SC
SC
300
260
o
C
o
C
s
s
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. I
= 7A, L = 400 µ H, V
CE
3. V
CE(PK)
= 840V, T
= 125
J
= 15V, T
GE
o
C, R
G
= 25
J
= 82 Ω.
o
C.
o
T
= 25
Electrical Specifications
C, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
Emitter to Collector Breakdown Voltage BV
Collector to Emitter Leakage Current I
Collector to Emitter Saturation Voltage V
Gate to Emitter Threshold Voltage V
Gate to Emitter Leakage Current I
CES
ECS
CES
CE(SAT)
GE(TH)
GES
Switching SOA SSOA T
Gate to Emitter Plateau Voltage V
On-State Gate Charge Q
GEP
G(ON)
I
= 250 µ A, V
C
I
= 10mA, V
C
V
= 1200V T
CE
I
= 1.0A
C
V
= 15V
GE
I
= 50 µ A, V
C
V
= ± 20V - -
GE
= 150
J
L = 2mH, V
I
= 1.0A, V
C
I
= 1.0A
C
V
= 600V
CE
= 0V 1200 - - V
GE
= 0V 15 - - V
GE
o
= 25
C - - 250
C
T
T
T
T
= V
CE
GE
o
C, R
= 82 Ω, V
G
= 1200V
CE(PK)
= 600V - 9.2 - V
CE
V
V
o
= 125
C
C
C
C
C - 20 -
o
= 150
C - - 1.0 mA
o
= 25
C - 2.5 2.9 V
o
= 150
C - 3.8 4.3 V
6.0 7.1 - V
= 15V,
GE
= 15V - 14 20 nC
GE
= 20V - 15 21 nC
GE
6- - A
A
A
250 nA
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
1400
3
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
1
2
600 800400200 1000 1200
0
4
6
5
7
TJ = 150oC, RG = 82Ω, V
GE
= 15V, L = 2mH
HGTD1N120BNS, HGTP1N120BN
Electrical Specifications T
= 25oC, Unless Otherwise Specified (Continued)
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Current Turn-On Delay Time t
d(ON)I
Current Rise Time t
Current Turn-Off Delay Time t
d(OFF)I
Current Fall Time t
Turn-On Energy (Note 5) E
Turn-On Energy (Note 5) E
Turn-Off Energy (Note 4) E
Thermal Resistance Junction To Case R
rI
fI
ON1
ON2
OFF
rI
fI
ON1
ON2
OFF
θJC
IGBT and Diode at T
I
= 1.0A
CE
V
= 960V
CE
V
= 15V
GE
R
= 82 Ω
G
L = 4mH
Test Circuit (Figure 18)
IGBT and Diode at T
I
= 1.0 A
CE
V
= 960V
CE
V
= 15V
GE
R
= 82 Ω
G
L = 4mH
Test Circuit (Figure 18)
= 25
J
= 150
J
o
C
-1520ns
-1114ns
-6776ns
- 226 300 ns
-70 - µJ
- 172 187 µJ
- 90 123 µJ
o
C
-1317ns
-1115ns
-7588ns
- 258 370 ns
- 145 - µJ
- 385 440 µJ
- 120 175 µJ
- - 2.1
NOTES:
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON1
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18.
o
C/W
ON2
is
Typical Performance Curves (Unless Otherwise Specified)
6
5
4
3
2
, DC COLLECTOR CURRENT (A)
1
CE
I
0
25 75 100 125 150
FIGURE 1. DC COLLECTOR CURRENT vs CASE
50
TC, CASE TEMPERATURE (oC)
TEMPERATURE
V
= 15V
GE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2001 Fairchild Semiconductor Corporation HGTD1N120BNS, HGTP1N120BN Rev. B
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