Fairchild Semiconductor FDS3612 Datasheet
FDS3612
100V N-Channel PowerTrench
MOSFET
FDS3612
March 2001
General Description
This N-Channel MOSFET has been designed
specifically to i mprove the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM c ontrollers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications. The result is a MOSFET that is
R
DS(ON)
easy and safer to drive (even at very high frequenc ies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor Driver
D
D
D
D
G
S
SO-8
Absolute Maximum Ratings T
S
S
o
=25
C unless otherwise noted
A
Features
• 3.4 A, 100 V. R
R
• Fast switching speed
• Low gate charge (14 nC typ)
• High performance trench te chnology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 120 mΩ @ VGS = 10 V
DS(ON)
= 130 mΩ @ VGS = 6 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 100 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 3.4 A
– Pulsed 20
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
± 20
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation
FDS3612 FDS3612 13’’ 12mm 2500 units
°C/W
°C/W
FDS3612 Rev B1(W)
FDS3612
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 3.4 A 90 mJ
DSS
IAR Drain-Source Avalanche Current 3.4 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
100 V
106
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 10 V, VDS = 10 V 10 A
D(on)
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 3.4 A
= 6 V, ID = 3.2 A
V
GS
V
= 10 V, ID = 3.4A, TJ = 125°C
GS
gFS Forward Transconductance VDS = 10 V, ID = 3.4 A 11 S
2 2.5 4 V
–6
88
94
170
120
130
245
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 632 pF
iss
C
Output Capacitance 40 pF
oss
C
Reverse Transfer Capacitance
rss
= 50 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
20 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 8.5 17 ns
d(on)
tr Turn–On Rise Time 2 4 ns
t
Turn–Off Delay Time 23 37 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 14 20 nC
Qgs Gate–Source Charge 2.4 nC
Qgd Gate–Drain Charge
= 50 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
V
= 50 V, ID = 3.4 A,
DS
V
= 10 V
GS
GEN
= 6 Ω
4.5 9 ns
3.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
is determined by the user's board design.
θCA
V
= 0 V, IS = 2.1 A (Note 2) 0.75 1.2 V
GS
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted on a
minimum pad.
FDS3612 Rev B1(W)
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