Fairchild Semiconductor FDS3580 Datasheet

FDS3580

80V N-Channel PowerTrenchTM MOSFET

FDS3580

April 1999

PRELIMINARY

General Description

This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM

controllers.

These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency .

D

D

DS(ON)

D

D

G

S

SO-8

Absolute Maximum Ratings

S

S

TA = 25°C unless otherwise noted

Features

• 7.6 A, 80 V. R

R

= 0.027 Ω @ V

DS(ON

)

= 0.031 Ω @ V

DS(ON)

= 10 V

GS

= 6 V.

GS

• Low gate charge (34nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• High power and current handling capability.

5

6

7
8

4

3

2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 80 V
Gate-Source Voltage
Drain Current - Continuous

- Pulsed 50

Power Dissipation for Single Operat ion

Operating and Storage Junction Temperat ure Range -55 to +150

(Note 1a)

(Note 1a)
(Note 1b)
(Note 1c)

20

±

7.6 A

2.5 W

1.2
1

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

50
25

Package Outlines and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS3580 FDS3580 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

V

C

°

C/W

°

C/W

°

FDS3580 Rev. B

FDS3580

yp

Electrical Characteristics

TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min T
Off Characteristics

BV

DSS

BV

∆

T

∆

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

GS(th)

V

∆

T

∆

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA80 V

DSS

Breakdown Voltage Temperature
Coefficient

J

ID = 250 µA, Referenced to 25°C81mV/

Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

(Note 2)

Gate Threshold Voltage VDS = VGS, ID = 250 µA22.54V
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

ID = 250 µA, Referenced to 25°C-7mV/

VGS = 10 V, ID = 7.6 A
V

= 10 V, ID = 7.6 A, TJ=125°C

GS

V

= 6 V, ID = 7 A

GS

On-State Drain Current VGS = 10 V, VDS = 5 V 30 A
Forward Transconductance VDS = 5 V, ID = 7.6 A 28 S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1800 pF
Output Capacitance 180 pF

= 25 V, VGS = 0 V,

V

DS

f = 1.0 MHz

Reverse Transfer Capacitance

Max Units

0.027

0.022

0.055

0.037

0.031

0.024

90 pF

C

°

A

µ

C

°

Ω

(Note 2)

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g

gs

gd

Turn-On Delay Time 13 26 ns
Turn-On Rise Time 8 20 ns
Turn-Off Delay Time 34 60 ns
Turn-Off Fall Time
Total Gate Charge 34 46 nC
Gate-Source Charge 6.1 nC
Gate-Drain Charge

V

= 40 V, ID = 1 A,

DD

V

= 10 V, R

GS

= 40 V, ID = 7.6 A,

V

DS

= 10 V

V

GS

GEN

= 6

Ω

16 30 ns

6.9 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A

is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the

θJA

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 50° C/W when

mounted on a 1 in
pad of 2 oz. copper.

2

b) 105° C/W when

mounted on a 0.04 in
pad of 2 oz. copper.

(Note 2)

2

0.74 1.2 V

c) 125° C/W when
mounted on a minimum
pad.

FDS3580 Rev. B

T ypical Characteristics

FDS3580

60

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

VGS = 10V

6.0V

012345

5.0V

4.5V

, DRAIN-SOURCE VOLTAGE (V)

V

DS

4.0V

3.5V

Figure 1. On-Region Characteristics.

2

ID = 7.6A

1.8
V

= 10V

GS

1.6

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

2

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

0.8

VGS = 4.0V

4.5V

5.0V

6.0V

7.0V
10V

1

0 102030405060

, DIRAIN CURRENT (A)

I

D

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.06

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM)

DS(ON)

0.01

R

0

345678910

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = 125oC

TA = 25oC

ID = 3.8A

Figure 3. On-Resistance Variation

with Temperature.

60

VDS = 5V

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

23456

, GATE TO SOURCE VOLTAGE (V)

V

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

BODY DIODE FORWARD V O LTAGE (V)

V

SD,

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage V ariation

with Source Current

and Temperature.

FDS3580 Rev. B