Fairchild Semiconductor FDS3570 Datasheet
FDS3570
80V N-Channel PowerTrenchTM MOSFET
FDS3570
May 1999
PRELIMINARY
General Description
This N-Channel Logic Level MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
D
D
DS(on)
Features
9 A, 80 V. R
R
= 0.019 Ω @ V
DS(ON
)
= 0.022 Ω @ V
DS(ON)
= 10 V
GS
= 6 V.
GS
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
5
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 80 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) 9A
- Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +150
±20
1.2
1
V
°C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS3570 FDS3570 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS3570 Rev. B
FDS3570
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA80 V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
Gate-Body Leakage Current
ID = 250 µA, Referenced to 25°C77mV/
µ
VGS = 20 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current
VGS = -20 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 250 µA22.44V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C-7mV/
VGS = 10 V, ID = 9 A
V
= 10 V, ID = 9 A, TJ = 125°C
GS
V
= 6 V, ID = 8.4 A
GS
0.015
0.027
0.016
0.019
0.038
0.022
On-State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 7.6 A 40 S
°
A
°
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 2750 pF
Output Capacitance 280 pF
Reverse Transfer Capacitance
V
= 25 V, VGS = 0 V,
DS
f = 1.0 MHz
140 pF
C
C
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 20 32 ns
Turn-On Rise Time 12 24 ns
Turn-Off Delay Time 60 95 ns
Turn-Off Fall Time
Total Gate Charge 54 76 nC
Gate-Source Charge 9.6 nC
Gate-Drain Charge
= 40 V, ID = 1 A,
V
DD
V
= 10 V, R
GS
V
= 40 V, ID = 9 A,
DS
V
= 10 V
GS
GEN
= 6
Ω
24 38 ns
14 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward
VGS = 0 V, IS = 2.1 A
(Note 2)
0.72 1.2 V
Voltage
is guaranteed by design while R
θJC
a) 50° C/W when
is determined by the user's board design.
θCA
mounted on a 1 in
pad of 2 oz. copper.
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
c) 125° C/W when
2
mounted on a minimum
pad.
FDS3570 Rev. B
Typical Characteristics
FDS3570
50
VGS = 10V
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
0123
4.5V
4.0V
3.5V
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
2
ID = 9A
1.8
V
= 10V
GS
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50-250 255075100125150
T
, JUNCTION TEMPERATURE (oC)
J
2
1.8
1.6
VGS = 4.0V
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
4.5V
5.0V
6.0V
I
, DRAIN CURRENT (A)
D
7.0V
10V
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.06
0.05
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
0
0246810
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
ID = 4.5A
Figure 3. On-Resistance Variation
with Temperature.
60
VDS = 5V
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
23456
o
o
TA = -55oC
V
, GATE TO SOURCE VO LTAGE (V)
GS
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
FDS3570 Rev. B
Loading...