Fairchild Semiconductor FDS2670 Datasheet
FDS2670
200V N-Channel PowerTrench
MOSFET
FDS2670
June 2000
PRELIMINARY
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
RDS
(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
D
Features
• 3.0 A, 200 V. R
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
= 0.125 Ω @ VGS = 10 V
DS(ON)
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 200 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 3.0 A
– Pulsed 20
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +150
±20
1.2
1.0
V
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS2670 FDS2670 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporati on
°C/W
°C/W
°C/W
FDS2670 Rev B(W)
FDS2670
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
200 V
214
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
===∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 3.0 A
=10 V, ID =3.0 A, TJ =125°C
V
GS
244.5V
–10
100
205
On–State Drain Current VGS = 10 V, VDS = 10 V 20 A
Forward Transconductance VDS = 10 V, ID = 3.0 A 15 S
125
275
mV/°C
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1228 pF
Output Capacitance 112 pF
Reverse Transfer Capacitance
V
= 100 V, V
DS
f = 1.0 MHz
GS
= 0 V,
17 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 13 23 ns
Turn–On Rise Time 8 16 ns
V
= 100 V, ID = 1 A,
DD
= 10 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 30 48 ns
Turn–Off Fall Time
Total Gate Charge 27 43 nC
Gate–Source Charge 7 nC
= 100 V, ID = 3 A,
V
DS
= 10 V
V
GS
Gate–Drain Charge
25 40 ns
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°/W when
mounted on a 1in
pad of 2 oz copper
2
is determined by the user's board design.
θCA
= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
V
GS
b) 105°/W when
mounted on a 0.04
2
in
pad of 2 oz
copper
c) 125°/W when mounted on a
minimum pad.
FDS2670 Rev B(W)
Typical Characteristics
FDS2670
20
VGS = 10V
15
10
5
0
0246810
6.5V
6.0V
V
, DRAIN-SOURCE VO LTAGE (V)
DS
5.5V
1.6
VGS = 5.5V
1.4
1.2
1
0.8
0 4 8 12 16 20
6.0V
, DRAIN CURRENT (A)
I
D
6.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2.5
ID = 3.0A
= 10V
V
GS
2
1.5
1
0.5
0.4
0.3
T
0.2
0.1
= 125oC
TA = 25oC
10.0V
ID = 1.5 A
0
-50-250 255075100125150
T
, JUNCTION TEMPERAT URE (oC)
J
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 15V
24
18
T
12
6
0
345678
= 125oC
, GATE TO SOURCE VOLT AGE (V)
V
GS
o
-55oC
0
45678910
V
, GATE TO SOURCE VOLT AGE (V)
GS
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWARD VO LTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS2670 Rev B(W)