Fairchild Semiconductor FDS2170N3 Datasheet
May 2003
FDS2170N3
200V N-Channel PowerTrench MOSFET
FDS2170N3
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Features
• 3.0 A, 200 V. R
• High performance trench technology for extremely
DS(ON)
low R
• High power and current handling capability
= 128 mΩ @ VGS = 10 V
DS(ON)
Applications
• Synchronous rectifier
• DC/DC converter
• Fast switching, low gate charge (26nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
Drain Contact
45
36
27
18
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 200 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 3.0 A
– Pulsed 20
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a) 3.0
(Note 1b)
± 20
1.8
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 40
(Note 1) 0.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS2170N3 FDS2170N3 13’’ 12mm 2500 units
2002 Fairchild Semiconductor Corpora tion
°C/W
FDS2170N3 Rev B1W)
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 100 V, ID=3.0 A 370 mJ
DSS
IAR Drain-Source Avalanche Current 3 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
GSSF
I
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
GSSR
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
200 V
231
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 3.0 A
= 10 V, ID = 3.0 A,TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 3.0 A 15 S
2 4 4.5 V
–10
108
214
268
128
mV/°C
mΩ
FDS2170N3
Dynamic Characteristics
= 100 V, V
V
C
Input Capacitance 1292 pF
iss
C
Output Capacitance 72 pF
oss
C
Reverse Transfer Capacitance
rss
DS
f = 1.0 MHz
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.5
= 0 V,
GS
24 pF
Ω
Switching Characteristics (Note 2)
= 100 V, ID = 1 A,
V
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 30 48 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 26 36 nC
Qgs Gate–Source Charge 7 nC
Qgd Gate–Drain Charge
DD
= 10 V, R
V
GS
= 100 V, ID = 3.0 A,
V
DS
= 10 V
V
GS
GEN
= 6 Ω
23 36 ns
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A
VSD
trr Diode Reverse Recovery Time 95 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. R
θJA
drain pins. R
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 40°C/W when
mounted on a 1in
of 2 oz copper
= 0 V, IS = 2.5 A (Note 2) 0.76 1.2 V
V
GS
I
= 3.0A
F
= 100 A/µs (Note 2)
d
iF/dt
2
pad
552 nC
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2170N3 Rev B1(W)
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