Fairchild Semiconductor FDS2070N3 Datasheet
May 2003
FDS2070N3
150V N-Channel PowerTrench MOSFET
FDS2070N3
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 4.1 A, 150 V. R
R
• High performance trench technology for extremely
DS(ON)
low R
• High power and current handling capability
• Fast switching, low gate charge (38nC typical)
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
= 78 mΩ @ VGS = 10 V
DS(ON)
= 88 mΩ @ VGS = 6.0 V
DS(ON)
Bottom-side
Drain Contact
45
36
27
18
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 150 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) 4.1 A
– Pulsed 30
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 3.0
Operating and Storage Junction Temperature Range –55 to +150
(Note 1b)
± 20
1.8
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 40
(Note 1) 0.5
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS2070N3 FDS2070N3 13’’ 12mm 2500 units
2002 Fairchild Semiconductor Intern ational
°C/W
FDS2070N3 Rev B1(W)
FDS2070N3
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
Drain-Source Avalanche Energy Single Pulse, VDD = 75 V, ID= 4.1 A 370 mJ
DSS
IAR Drain-Source Avalanche Current 4.1 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
GSSF
I
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
GSSR
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
150
154
V
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 4.1 A
= 6.0V, ID = 3.8 A
V
GS
= 10 V, ID = 4.1 A,TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 4.1 A 24 S
2 2.6 4 V
–7
58
61
112
78
160
88
mV/°C
mΩ
Dynamic Characteristics
= 75 V, V
V
C
Input Capacitance 1884 pF
iss
C
Output Capacitance 102 pF
oss
C
Reverse Transfer Capacitance
rss
DS
f = 1.0 MHz
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6
= 0 V,
GS
35 pF
Ω
Switching Characteristics (Note 2)
= 75 V, ID = 1 A,
V
t
Turn–On Delay Time 10 20 ns
d(on)
tr Turn–On Rise Time 6 12 ns
t
Turn–Off Delay Time 40 64 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 38 53 nC
Qgs Gate–Source Charge 8 nC
Qgd Gate–Drain Charge
DD
= 10 V, R
V
GS
= 75 V, ID = 4.1 A,
V
DS
= 10 V
V
GS
GEN
= 6 Ω
20 36 ns
11 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.5 A
VSD
Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 75 nS
Qrr Diode Reverse Recovery Charge
Notes:
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
1. R
θJA
drain pins. R
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 40°C/W when
mounted on a 1in2 pad
of 2 oz copper
= 0 V, IS = 2.5 A (Note 2)
V
GS
I
= 4.1A
F
= 100 A/µs (Note 2)
d
iF/dt
0.75 1.2 V
404 nC
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2070N3 Rev B1(W)
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