Fairchild Semiconductor FDR858P Datasheet

February 1999

FDR858P
Single P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

The SuperSOT-8 family of P-Channel Logic Level
MOSFETs have been designed to provide a low profile,
small footprint alternative to industry standard SO-8 little
foot type product.

This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.

These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

-8 A, -30 V. R
R

= 0.019 Ω @ VGS = -10 V,

DS(ON)

= 0.028 Ω @ VGS = -4.5 V.

DS(ON)

Low gate charge (21nC typical).
High performance trench technology for extremely low

R

.

DS(ON)

SuperSOTTM-8 package: small footprint (40%) less than
SO-8); low profile (1mm thick); maximum power
comperable to SO-8.

SO-8

SOT-223

SOIC-16

S

D

D

S

G

SuperSOT -8

Mark: 858P

TM

Absolute Maximum Ratings T

D

D

D

= 25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V
Gate-Source Voltage ±20 V
Draint Current - Continuous (Note 1) -8 A

- Pulsed -50

P

D

TJ,T

Maximum Power Dissipation (Note 1a) 1.8

(Note 1b)

(Note 1c)

Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W

5

6
7

8

4
3

2
1

W

1

0.9

© 1999 Fairchild Semiconductor Corporation

FDR858P Rev.C

Electrical Characteristics (T

= 25OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSS

I

GSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V
Breakdown Voltage Temp. Coefficient ID = -50 µA, Referenced to 25 oC -22 mV /oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -24 V, V

Gate - Body Leakage Current VGS = 20 V, V
Gate - Body Leakage, Reverse VGS = -20 V, V

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.7 -3 V
Gate Threshold Voltage Temp.Coefficient ID = -50 µA, Referenced to 25 oC 4 mV /oC

/∆T

J

Static Drain-Source On-Resistance VGS = -10 V, ID = -8 A 0.0155 0.019

VGS = -4.5 V, ID = -6.3 A 0.022 0.028

I

D(ON)

g

FS

On-State Drain Current VGS = -10 V, VDS = -5 V -50 A
Forward Transconductance VDS = -10 V, ID = -3.2 A 25 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, VGS = 0 V,
Output Capacitance 590 pF

f = 1.0 MHz

Reverse Transfer Capacitance 260 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = -15 V, ID = -1 A, 12 22 ns
Turn - On Rise Time

VGS = -10V, R
Turn - Off Delay Time 100 140 ns
Turn - Off Fall Time 55 80 ns
Total Gate Charge VDS = -15 V, ID = -8 A, 21 30 nC
Gate-Source Charge VGS = 5 V 6 nC
Gate-Drain Charge 8 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

= 0 V -1 µA

GS

TJ = 55°C -10 µA

= 0 V 100 nA

DS

= 0 V -100 nA

DS

TJ = 125°C 0.021 0.03

2010 pF

GEN

= 6 Ω

15 27 ns

Ω

I

S

V

SD

Notes:

1. R

JA

θ

by design while R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.67 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.7 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

a. 70OC/W on a 1 in2 pad of 2oz

copper.

b. 125OC/W on a 0.026 in2 of pad

of 2oz copper.

c. 135OC/W on a 0.005 in2 of pad

of 2oz copper.

is guaranteed

JC

θ

FDR858P Rev.C

Typical Electrical Characteristics

60

V = -10V

GS

48

36

24

12

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4 5

Figure 1. On-Region Characteristics.

1.6

I = -8.0A

D

V = -10V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

-6.0V

-4.5V

-4.0V

-3.5V

-3.0V

- V , DRAIN-SOURCE VOLTAGE (V)

DS

T , JUNCTION TEMPERATURE (°C)

J

2.5

V = -3.5 V

2

GS

-4.0V

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 10 20 30 40 50

-4.5V

-5.5V

-7.0V

- I , DRAIN CURRENT (A)

D

-10V

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.08

0.06

0.04

0.02

DS(ON)

R , ON-RESISTANCE (OHM)

0

0 2 4 6 8 10

- V , GATE TO SOURCE VOLTAGE (V)

GS

I =-4.0A

D

T =125°C

A

25°C

Figure 3. On-Resistance Variation

with Temperature.

50

V = -5V

DS

40

30

20

D

- I , DRAIN CURRENT (A)

10

0

1 2 3 4 5

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

J

125°C

25°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

50

V = 0V

GS

10

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

T = 125°C

J

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDR858P Rev.C