Fairchild Semiconductor FDR856P Datasheet

March 1998

FDR856P

P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

SuperSOTTM-8 P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as battery powered circuits or
portable electronics where low in-line power loss, fast
switching and resistance to transients are needed.

- 6.3 A, -30 V, R
R

SuperSOTTM-8 package:
small footprint (40% less than SO-8);low profile (1mm
thick);maximum power comperable to SO-8.

High density cell design for extremely low R

=0.025 Ω @ VGS = -10 V

DS(ON)

=0.040 Ω @ VGS = -4.5 V.

DS(ON)

DS(ON)

.

SOT-23

SuperSOTTM-6

SuperSOTTM-8

SO-8 SOT-223

SOIC-16

S

D

D

5

4

S

856P

pin 1

SuperSOT -8

TM

Absolute Maximum Ratings T

D

G

D

D

= 25oC unless other wise noted

A

6
7

8

Symbol Parameter FDR856P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V
Gate-Source Voltage - Continuous ±20 V
Maximum Drain Current - Continuous (Note 1a) -5.1 A

- Pulsed -50

P

D

TJ,T

Maximum Power Dissipation (Note 1a) 1.8 W

(Note 1b)

(Note 1c)

Operating and Storage Temperature Range -55 to 150 °C

STG

1

0.9

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W

3

2
1

© 1998 Fairchild Semiconductor Corporation

FDR856P Rev.B

Electrical Characteristics (T

= 25 OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSSF

I

GSSR

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, I D = -250 µA -30 V
Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = -250 µA, Referenced to 25 oC
VDS = -24 V, V

GS

= 0 V

-15

-1 µA

TJ = 55°C
Gate - Body Leakage, Forward VGS = -20 V, VDS = 0 V -100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, V

DS

= 0 V

mV /oC

-10 µA

-100 nA

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 -1.5 -3 V
Gate Threshold Voltage Temp. Coefficient

/∆T

J

Static Drain-Source On-Resistance

ID = -250 µA, Referenced to 25 oC
VGS = -10 V, I D = -6.3 A

3

0.022 0.025

mV /oC

TJ =125°C 0.03 0.042

0.033 0.04

15 S

I
g

D(ON)

FS

VGS = -4.5 V, I D = -5 A
On-State Drain Current VGS = -10 V, VDS = -5 V -50 A
Forward Transconductance

VDS = -10 V, I D = -6.3 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, VGS = 0 V,
Output Capacitance 740 pF

f = 1.0 MHz

1370 pF

Reverse Transfer Capacitance 220 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time

V

= -15 V, I D= -1 A

DS

VGS = -10 V , RG = 6 Ω
Turn - Off Delay Time 80 100 ns
Turn - Off Fall Time 130 160 ns

g

gs

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge 8.7 nC

VDS = -15 V, I D = -6.3 A,

V

= -10 V

GS

7 14 ns

12 19 ns

22 31 nC

3.8 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

Notes:

1. R

SD

JA

θ

design while R

Maximum Continuous Drain-Source Diode Forward Current -1.3 A
Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

VGS = 0 V, IS = -1.3 A

(Note 2)

-0.73 -1.2 V

is guaranteed by

JC

θ

Ω

a. 50OC/W on a 0.5 in

pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2

b. 105OC/W on a 0.02 in

pad of 2oz copper.

2

c. 125OC/W on a 0.003 in2 pad

of 2oz copper.

FDR856P Rev.B

Typical Electrical Characteristics

30

V = -10V

GS

-5.5V

25

20

15

10

5

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 0.5 1 1.5 2 2.5 3

-4.5V

-4.0V

-3.5V

-3.0V

-2.5V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6

I = -6.3A

D

V = -10V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

2.5

V = -3.5 V

GS

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20 25 30

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.125

0.1

0.075

0.05

0.025

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

-4.0V

-4.5V

-5.0V

-5.5V

-7.0V

- I , DRAIN CURRENT (A)

D

T = 125°C

J

T = 25°C

J

-V , GATE TO SOURCE VOLTAGE (V)

GS

-10V

I = -3A

D

Figure 3. On-Resistance Variation with

Temperature.

30

V = -5V

DS

25

20

15

10

D

- I , DRAIN CURRENT (A)
5

0

1 2 3 4 5

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4 . On Resistance Variation with

Gate-to-Source Voltage.

40

V = 0V

GS

5
1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

T = 125°C

J

25°C

-55°C

SD

Figure 5 . Transfer Characteristics. Figure 6 . Body Diode Forward Voltage

Variation with Source
Current and Temperature.

FDR856P Rev.B