Fairchild Semiconductor FDR8521L Datasheet

FDR8521L

(

)

y

)

P-Channel MOSFET With Gate Driver For Load Switch Application

FDR8521L

August 2000

General Description

This device is designed for configuration as a load switch
and is particularly suited for power management in por­table battery powered electronic equipment. Designed to
operate from 3V to 20V input and supply up to 2.9A, the
device features a small N-Channel MOSFET (Q1) together
with a large P-Channel Power MOSFET (Q2) in a single
SO-8 package.

Applications

• Power management

• Load switch

V

OU T,C1,CO

5

V

OUT ,C1,CO

6

7

2

R

R

2

8

SuperSOT -8

TM

1

pin

Features

• V

= 0.07 V @ VIN= 12 V, IL= 1 A.R

DROP

V

= 0.115 V @ VIN= 5 V, IL= 1 A.R

DROP

• V

= 0.2 V @ VIN= 12 V, IL=2.9 A.R

DROP

V

= 0.2 V @ VIN= 5 V,IL= 1.8 A.R

DROP

(ON)

(ON)

(ON)

(ON)

• Control MOSFET (Q1) includes Zener protection for

ESD ruggedness (>6kV Human Body Model).

• High density cell design for extremely low on-resistance.

VIN,R1,C

i

Q2

Q1

Se e App li cat i o n Ci r c ui t

4

R1,R2,C

1

3

IN

C1,C

O

2

V

ON/OFF

1

EQUIVALENT CIRCUIT

V

DR OP

+

ON/OFF

= 0.07 Ω

= 0.115 Ω.

= 0.07 Ω

= 0.115 Ω.

-

OUT

T

=25oC unless otherwise noted

Absolute Maximum Ratings

A

Symbol Parameter Ratings Units

V

IN

V

ON/OFF

I

D

Input Voltage Range
On/Off Voltage Range 2.5 - 8 V
Load Current - Continuous

- Puls e d 8

P

D

TJ, T

stg

Max im um Powe r D iss ipatio n

Operating and Storage Temperature Range -55 to +150

ESD Electros tatic D isc ha rge Rating MIL-STD-883D

Human-Bod

-Model (100pf/1500 Ohm

(Note 1)

Note 2

(Note 2)

3 - 20 V

2.9 A

0.8 W

6kV

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 2)
(Note 2)

156

40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width

8521L FDR8521L 13’’ 12mm 3000 units

2000 Fairchild Semiconductor International

C

°

C/W

°

C/W

°

Qua n tity

FDR8521L Rev. C

FDR8521L

Electrical Characteristics

TA=25oC unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

OFF Characteristics

I

FL

ON Characteristics

V

DROP

R

(ON)

I

L

Notes:

1. Range of VIN can be up to 25V, but R1 and R2 must be scaled such that VGS of Q2 does not exceed -20V.

2. R

mounting surface of the drain pins. R

3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Forward Leakage Current VIN = 20 V, V

(Note 3)

V

Conduction Voltage

IN

V

IN

V

IN

V

IN

= 12 V, V
= 5 V, V
= 12 V, V
= 5 V, V

Q2 - Static On-Resistance VGS = -12 V, ID = 2.9 A

V

= -5 V, ID = 1.8 A

Load Current V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

θJA

GS

= 0.2 V, VIN = 12 V, V

DROP

V

= 0.2 V, VIN = 5 V, V

DROP

is guaranteed by design while R

θJC

= 250 µA1

ON/OFF

= 3.3 V, IL = 1 A

ON/OFF

= 3.3 V, IL = 1 A

ON/OFF

= 3.3 V, IL = 2.9 A 0.200

ON/OFF

= 3.3 V, IL = 1.8 A 0.200

ON/OFF

0.053

0.085

0.054

0.090

= 3.3 V

ON/OFF

= 3.3 V

ON/OFF

is determined by the user’s board design.

θJA

2.9

1.8

0.070

0.115

0.070

0.115

µ

V

Ω

A

FDR8521L Load Switch Application

APP LICA TI ON CIRCUIT

A

Q2

IN OUT

R1

Ci

ON/OFF

C1

R2

Co

Q1

External Component Recommendation:

For applications where Co ≤ 1µF.
For slew rate control, select R2 in the range of 470 - 10kΩ .
For additional in-rush current control,C1 ≤ 1000pF can be added.
Select R1 so that the R1/R2 ratio ranges from 10 - 100. R1 is required to turn Q2 off.

LOAD

FDR8521L Rev. C

T ypical Characteristics (continued)

µ

FDR8521L

0.7
VIN = 12V

= 1.5 - 8V

V

0.6

ON/OFF

S, D < 2%

PW = 300

0.5

0.4

(V)

DROP

0.3

V

0.2

0.1

0

012345678

TA = 125oC

TA = 25oC

(A)

I

L

Figure 1. Conduction V oltage Drop

Variation with Load Current.

0.3

0.25

0.2

(V)

0.15

DROP

V

0.1

0.05

0

2 4 6 8 10 12

, INPUT VOLTAGE (V)

V

IN

IL = 1A
V

ON/OFF

PW = 300µS, D <

TA = 125oC

TA = 25oC

= 1.5V -8V

1

VIN = 5V
V

= 1.5 - 8V

ON/OFF

0.8
PW = 300µS, D <

0.6

(V)

DROP

V

0.4

0.2

0

012345678

2%

TA = 125oC

I

(A)

L

TA = 25oC

Figure 2. Conduction V oltage Drop

Variation with Load Current.

2%

Figure 3. On-Resistance V ariation

with Input Volt age.

1

D = 0.5

0.5

R (t) = r(t) * R

JA

0.2

0.2

0.1

0.05

0.02

0.01

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TRANSIENT THERMAL RESISTANCE

0.001

0.1

0.05

0.02

0.01
Single Pulse

0.0001 0.001 0.01 0.1 1 10 100 300

t , TIME (sec)

1

JA

θ

θ

R =

JA

θ

P(pk)

P(pk)

t

t

1

1

t

t

2

2

T - T = P * R (t)

J

J

A

A

Duty Cycle, D = t / t

156

Figure 4.Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 2.

Transient themal response will change depending on the circuit board design.

°C/W

JA

θ

1

JA

θ

2

2

FDR8521L Rev. C