Fairchild Semiconductor FDR8508P Datasheet

FDR8508P

Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

FDR8508P

March 1999

General Description

These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on state resistance and yet maintain low gate charge for
superior switching performance.

Applications

 Load switch
 DC/DC converter
 Motor driving

D2

D2

D1

D1

S2

G2

S1

G1

SuperSOT-8

Absolute Maximum Ratings T

pin #1

= 25°C unless otherwise noted

A

Features

 -3.0 A, -30 V. R

R

= 0.052Ω @ V

DS(ON)

= 0.086Ω @ V

DS(ON)

= -10V

GS

= -4.5V.

GS

 Low gate charge. (8nC typical).

 High performance trench technology for extremely

low R

DS(ON)

 High power and current handling capability.

 Small footprint (38% smaller than a standard SO-8);

low profile package (1 mm thick); power handling
capability similar to SO-8.

5
6

7

8

4

3
2

1

Symbol Parameter FDR8508P Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -30 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) -3 A

- Pulsed -20
Power Dissipation 0.8 W
Operating and Storage Junction Temperature Range -55 to +150

±20

°C

V

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1a) 156
Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.8508 FDR8508P 13” 12mm 3000 units

1999 Fairchild Semiconductor Corporation

°C/W
°C/W

FDR8508P Rev. C

FDR8508P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

∆ BV
∆ T

I

DSS

I

GSSF

I

GSSR

DSS

J

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

/

DSS

Coefficient

= 0 V, ID = -250 µA

V

GS

= -250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1
Gate-Body Leakage Current VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current VGS = -20 V, VDS = 0 V -100 nA

-30 V
24

mV/°C

µA

On Characteristics (Note 2)

V

∆ V
∆ T

R

I

D(on)

g

GS(th)

GS(th)

J

DS(on)

FS

Gate Threshold Voltage
Gate Threshold Voltage

/

Temperature Coefficient
Static Drain-Source

On-Resistance

= VGS, ID = -250 µA

V

DS

= -250 µA, Referenced to 25°C

I

D

VGS = -10 V, ID = -3 A
V

= -10 V, ID = -3 A, TJ = 125°C

GS

V

= -4.5 V, ID = -2.3 A

GS

On-State Drain Current VGS = -10 V, VDS = -5 V -20 A
Forward Transconductance VDS = -5 V, ID = -3 A 9 mS

-1 -1.8 -3 V

-4

0.040

0.057

0.058

mV/°C

0.052

0.078

0.086

Ω
Ω
Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 750 pF
Output Capacitance 220 pF
Reverse Transfer Capacitance

V

= -15 V, VGS = 0 V, f = 1.0 MHz

DS

100 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time 12 22 ns
Turn-On Rise Time 14 25 ns
Turn-Off Delay Time 24 38 ns
Turn-Off Fall Time

g
gs
gd

Total Gate Charge 8 12 nC
Gate-Source Charge 1.8 nC
Gate-Drain Charge

= -15 V, ID = -1 A,

V

DD

V

= -10 V, R

GS

V

= -15 V, ID = -3A,

DS

= -5 V,

V

GS

GEN

= 6 Ω

16 27 ns

3nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

surface of the drain pins. R
device operation on FR-4 board instill air.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.67 A
Drain-Source Diode Forward

VGS = 0 V, IS = -0.67 A (Note 2) -0.75 -1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting

is guaranteed by design while R

θJC

156OC/W when mounted on a 0.0025 in2 pad of 2oz copper.

is determined by the users board design. R

θCA

shown below for single

θJA

FDR8508P Rev. C

Typical Characteristics

25

FDR8508P

20

VGS=-10V

-6.0V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

012345

-4.5V

-4.0V

-3.5V

-3.0V

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

Figure 1: On-Region Characteristics

1.4
ID=-3A

1.3

=-10V

V

GS

1.2

1.1

1

, NORMALIZED

DS(ON)

0.9

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.7

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

Figure 3: On-Resistance Variation

vs Temperature

0.12

0.1

VGS=-3.5V

0.08

0.06

0.04

NORMALIZED ON-RESISTANCE

0.02

-4.0V

-4.5V

-5.5V

-7.0V

-10V

0 4 8 121620

, DRAIN CURRENT (A)

-I

D

Figure 2: On-Resistance Variation

vs Drain Current and Gate Voltage

0.2

0.16

0.12

0.08

, ON RESISTANCE (OHM)

0.04

DS(ON)

R

0

0246810

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TJ=125oC

o

ID=-1.5A

Figure 4: On-Resistance Variation

vs Gate-To-Source Voltage

20

VGS=-5V

16

12

8

, DRAIN CURRENT (A)

D

-I

4

0

12345

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TJ=-55oC

o

125oC

Figure 5: Transfer Characteristics

100

VGS=0

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

TJ=125oC

25oC

-55oC

, BODY DIODE VOLTAGE (V)

-V

SD

Figure 6: Body Diode Forward Voltage

Variation vs Source Current

and Temperature

FDR8508P Rev. C