Fairchild Semiconductor FDR844P Datasheet
FDR844P
P-Channel 1.8V Specified PowerTrench
MOSFET
FDR844P
October 2001
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench proces s.
It has been optimized for battery power management
applications.
Applications
• Power management
• Load switch
• Battery protection
Features
• –10 A, –20 V. R
R
R
• Fast switching speed
• High performance trench te chnology for extremely
DS(ON)
low R
• High power and current handling capability
= 11 mΩ @ VGS = –4.5 V
DS(ON)
= 14 mΩ @ VGS = –2.5 V
DS(ON)
= 20 mΩ @VGS = –1.8 V
DS(ON)
S
D
D
S
G
SuperSOT -8
TM
D
D
D
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
45
36
27
18
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –10 A
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 1.8
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
(Note 1c)
± 8
1.0
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 70
(Note 1) 20
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation
.844P FDR844P 13’’ 12mm 2500 units
°C/W
°C/W
FDR844P Rev A1(W)
FDR844P
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = –16V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
= 0 V, ID = –250 µA
V
GS
= –250 µA, Referenced to 25°C
I
D
–20 V
–13
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–S t ate Drain Current VGS = –4.5 V, VDS = –5 V –50 A
D(on)
= VGS, ID = –250 µA
V
DS
= –250 µA, Referenced to 25°C
I
D
VGS = –4.5 V, ID = –10 A
= –2.5 V, ID = –9 A
V
GS
= –1.8 V, ID = –7.5 A
V
GS
V
= –4.5 V, ID = –10 A, TJ=125°C
GS
gFS Forward Transconductance VDS = –10 V, ID = –10 A 57 S
–0.4 –0.7 –1.5 V
3
7
9.5
13
9.5
11
14
20
15
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 4951 pF
iss
C
Output Capacitance 884 pF
oss
C
Reverse Transfer Capacitance
rss
= –10 V, V
V
DS
f = 1.0 MHz
= 0 V,
GS
451 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 16 29 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 196 314 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 53 74 nC
Qgs Gate–Source Charge 6 nC
Qgd Gate–Drain Charge
= –10 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
= –10 V, ID = –10 A,
V
DS
V
= –4.5 V
GS
GEN
= 6 Ω
78 125 ns
12 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –1.5 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 70°C/W when
mounted on a 1in2
pad of 2 oz copper
θCA
VGS = 0 V, IS = –1.5 A (Note 2) –0.56 –1.2 V
is determined by the user's board design.
b) 125°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 135°C/W when mounted on a
minimum pad.
FDR844P Rev A1(W)
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