Fairchild Semiconductor FDR840P Datasheet
FDR840P
P-Channel 2.5V Specified PowerTrench MOSFET
FDR840P
April 2000
PRELIMINARY
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Features
–10 A, –20 V. R
•
Fast switching speed.
•
R
DS(ON)
DS(ON)
= 0.011 Ω @ VGS = –4.5 V
= 0.016 Ω @ VGS = –2.5 V
Applications
High performance trench technology for extremely
•
Power management
•
Load switch
•
Battery protection
•
S
D
D
S
SuperSOT -8
TM
D
Absolute Maximum Ratings
G
D
D
TA=25oC unless otherwise noted
low R
DS(ON)
High power and current handling capability.
•
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
12
±
-10 A
– Pulsed -50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.8
1.0
0.9
Operating and Storage Junction Temperature Range -55 to +150
V
W
C
°
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
70
20
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDR840P FDR840P 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
C/W
°
C/W
°
FD840P Rev B(W)
FDR840P
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
I
GSSR
DSS
BV
T
Drain–Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
GS(th)
V
T
DS(on)
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
Forward Transconductance VDS = –10 V, ID = –10 A 49 S
(Note 2)
= 0 V, ID = –250 µA
V
GS
I
= –250 µA,Referenced to 25°C
D
= VGS, ID = –250 µA
V
DS
I
= –250 µA, Referenced to 25°C
D
VGS = –4.5 V, ID = –10 A
V
= –2.5 V, ID = –8.4 A
GS
= –4.5 V, ID = –10A, TJ=125°C
V
GS
–20 V
–12
mV/°C
–0.6 –0.8 –1.5 V
3
9
12
12
11
16
17
mV/°C
m
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 4481 pF
Output Capacitance 1532 pF
Reverse Transfer Capacitance
(Note 2)
Turn–On Delay Time 15 30 ns
Turn–On Rise Time 15 30 ns
= –10 V, V
V
DS
f = 1.0 MHz
= –5 V, ID = –1 A,
V
DD
= –4.5 V, R
V
GS
GS
GEN
= 0 V,
= 6
540 pF
Ω
Turn–Off Delay Time 120 240 ns
Turn–Off Fall Time
Total Gate Charge 41 60 nC
Gate–Source Charge 6.4 nC
V
= –10 V, ID = –10 A,
DS
= –4.5 V
V
GS
Gate–Drain Charge
60 120 ns
11.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.
JA
θ
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current –1.5 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
JC
θ
V
= 0 V, IS = –1.5 A
GS
is determined by the user's board design.
CA
θ
(Note 2)
-0.65 –1.2 V
A
µ
Ω
a) 70°/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
2
b) 125°/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 135°/W when mounted on a
minimum pad.
FD840P Rev B(W)
Typical Characteristics
FDR840P
50
VGS = -4.5V
-3.5V
40
30
20
10
, DRAIN-SOURCE CURRENT (A)
D
-I
0
00.511.52
-3.0V
-2.5V
-2.0V
, DRAIN-SOURCE VOLTAGE (V )
-V
DS
-1.5V
2
VGS = -2.0V
1.8
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 1020304050
-2.5V
-3.0V
- I
, DRAIN CURRENT (A)
D
-3.5V
-4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
ID = -10A
1.3
V
= -4.5V
GS
1.2
1.1
1
, NORMALIZED
0.9
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.7
-50 -25 0 25 50 75 100 125 150
T
, JUNCTION TEMPERATURE (oC)
J
0.04
0.03
0.02
, ON-RESISTANCE (OHM)
0.01
DS(ON)
R
0
12345
TA = 25oC
-V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = 125oC
-4.5V
ID = -5A
Figure 3. On-Resistance Variation with
Temperature.
60
VDS = -5V
50
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
0.5 1 1.5 2 2.5 3
-V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
-V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FD840P Rev B(W)
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