Fairchild Semiconductor FDR838P Datasheet
FDR838P
P-Channel 2.5V Specified PowerT renchTM MOSFET
FDR838P
March 1999
General Description
These P-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• Load switch
• Motor driving
• Power Management
S
D
D
S
G
SuperSOT -8
TM
Absolute Maximum Ratings
D
D
D
TA = 25°C unless otherwise noted
Features
• -8 A, -20 V. R
R
= 0.017 Ω @ V
DS(ON)
= 0.024 Ω @ V
ON)
DS(
= -4.5 V
GS
= -2.5 V
GS
• Low gate charge (30nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• Small footprint (38% smaller than a standard SO-8); low
profile package (1 mm thick); power handling capability
similar to SO-8.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -50
Power Dissipation for Si ngl e Operat i on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
8V
±
-8 A
1.8 W
1.0
0.9
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case
(Note 1a)
(Note 1)
70
20
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
838P
.
1999 Fairchild Semiconductor Corporation
FDR838P 13’’ 12mm 3000 units
C
°
C/W
°
C/W
°
FDR838P , Rev. C
FDR838P
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-20 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID= -250 µA, Referenced to 25°C-18mV/
Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.85 -1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to 25°C3mV/
VGS = -4.5 V, ID = -8 A
V
= -4.5V, ID = -8 A,TJ=125°C
GS
V
= -2.5 V, ID = -7.0 A
GS
On-State Drain Current VGS = -4.5 V, VDS = -5 V -50 A
Forward Transconductance VDS = -5 V, ID = -8 A 28 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 3300 pF
Output Capacitance 730 pF
= -10 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
Max Units
0.017
0.014
0.026
0.020
0.024
0.020
350 pF
C
°
A
µ
C
°
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 14 25 ns
Turn-On Rise Time 20 32 ns
Turn-Off Delay Time 110 150 ns
Turn-Off Fall Time
Total Gate Charge 30 45 nC
Gate-Source Charge 5 nC
Gate-Drain Charge
V
= -10 V, ID = -1 A,
DD
V
= -4.5 V, R
GS
= -10 V, ID = -8 A,
V
DS
= - 4.5 V
V
GS
GEN
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
1. R
surface of the drain Pins. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
Maximum Continuous Drain-Source Diode Forward Current -1.5 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.5 A
is guaranteed by design while R
θJC
a) 70° C/W when mounted on a
1.0 in2 pad of 2 oz. copper.
is determined by the user's board design.
θCA
b) 125° C/W when mounted on
a 0.026 in2 pad of 2oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
= 6
Ω
(Note 2)
60 90 ns
9nC
-0.7 -1.2 V
c) 135° C/W when mounted on
a minimum pad.
FDR838P , Rev. C
T ypical Characteristics
FDR838P
50
VGS=-4.5V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
0 0.6 1.2 1.8 2.4 3
-3.0V
-2.5V
-2.0V
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
Figure 1. On-Region Characteristics.
1.4
1.3
1.2
1.1
1
, NORMALIZED
DS(ON)
0.9
R
0.8
DRAIN-SOURCE ON RESISTANCE
0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNTION TEMPERATUR (oC)
2.5
2
VGS=-2.0V
1.5
, NORMALIZED
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 1020304050
-2.5V
-3.0V
, DRAIN CURRENT (A)
-I
D
-
-4.5V
Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
0.06
0.048
0.036
0.024
, ON RESISTANCE (OHM)
0.012
DS(ON)
R
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
T
=125oC
25oC
ID=-4A
Figure 3. On-Resistance Variation
with Temperature.
50
VDS=-5V
40
30
20
, DRAIN CURRENT (A)
D
-I
10
0
0 0.6 1.2 1.8 2.4 3
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TJ=-55oC
25oC 125oC
Figure 4: On-Resistance Variation
with Gate-to-Source V oltage.
100
VGS=0
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-V
o
T
=125
o
-55oC
, BODY DIODE VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward V oltage
Variation with Source Current
and Temperature.
FDR838P , Rev. C
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