Fairchild Semiconductor FDR8308P Datasheet

November 1998

FDR8308P
Dual P-Channel, Logic Level, PowerTrench

General Description Features

TM

MOSFET

The SuperSOT-8 family of P-Channel Logic Level MOSFETs
have been designed to provide a low profile, small footprint
alternative to industry standard SO-8 little foot type product.

These P-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor's advanced PowerTrench process that
has been tailored to minimize the on-state resistance and yet
maintain superior switching performance.

These devices are well suited for portable electronics
applications: load switching and power management, battery

charging circuits, and DC/DC conversion.

SOT-23

SuperSOT

TM

-6

SuperSOT

TM

-8

D2

D2

D1

D1

SuperSOT -8

8308P

S2

G2

S1

1

pin

TM

G1

-3.2 A, -20 V. R
R

= 0.050 Ω @ VGS = -4.5 V,

DS(ON)

= 0.070 Ω @ VGS = -2.5 V.

DS(ON)

Low gate charge (13nC typical).
High performance trench technology for extremely low

R

.

DS(ON)

SuperSOTTM-8 package: small footprint (40% less than
SO-8); low profile(1mmthick); maximum power
comparable to SO-8.

SO-8

SOT-223

5
6

7

8

SOIC-16

4

3
2

1

Absolute Maximum Ratings T

= 25oC unless otherwise noted

A

Symbol Parameter FDR8308P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -20 V
Gate-Source Voltage ±8 V
Draint Current - Continuous (Note 1) -3.2 A

- Pulsed -20

P

D

TJ,T

Maximum Power Dissipation (Note 1) 0.8
Operating and Storage Temperature Range -55 to 150 °C

STG

W

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

© 1998 Fairchild Semiconductor Corporation

Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

FDR8308P Rev.C

Electrical Characteristics (T

= 25OC unless otherwise noted )

A

Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BV

∆BV

I

DSS

I

GSS

I

GSS

DSS

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V
Breakdown Voltage Temp. Coefficient ID = -50 µA, Referenced to 25 oC -16 mV /oC

/∆T

J

Zero Gate Voltage Drain Current VDS = -16 V, V

Gate - Body Leakage Current VGS = 8 V, V

DS

Gate - Body Leakage, Reverse VGS = -8 V, V

ON CHARACTERISTICS (Note 2)

V

∆V

R

GS(th)

GS(th)

DS(ON)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.9 -1.5 V
Gate Threshold Voltage Temp.Coefficient ID = -50 µA, Referenced to 25 oC 2.5 mV /oC

/∆T

J

Static Drain-Source On-Resistance VGS = -4.5 V, ID = -3.2 A 0.038 0.05

VGS = -2.5 V, ID = -2.7 A 0.054 0.07

I

D(ON)

g

FS

On-State Drain Current VGS = -4.5 V, VDS = -5 V -20 A
Forward Transconductance VDS = -4.5 V, ID = -3.2 A 13 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V,
Output Capacitance 270 pF

f = 1.0 MHz

Reverse Transfer Capacitance 100 pF

SWITCHING CHARACTERISTICS (Note 2)

t
t

t
t
Q
Q
Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = -5 V, ID = -1 A, 8 16 ns
Turn - On Rise Time

VGS = -4.5 V, R
Turn - Off Delay Time 45 65 ns
Turn - Off Fall Time 30 50 ns
Total Gate Charge VDS = -10 V, ID = -4.5 A, 13 19 nC
Gate-Source Charge VGS = -4.5 V 1.8 nC
Gate-Drain Charge 3 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

= 0 V -1 µA

GS

TJ = 55°C -10 µA

= 0 V 100 nA

= 0 V -100 nA

DS

TJ = 125°C 0.053 0.075

1240 pF

GEN

= 6 Ω

15 27 ns

Ω

I

S

V

SD

Notes:

1. R

JA

θ

by design while R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.67 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.67 A (Note 2) -0.7 -1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

is determined by the user's board design.

CA

θ

156OC/W on a 0.0025 in2 pad of 2oz copper.

is guaranteed

JC

θ

FDR8308P Rev.C

Typical Electrical Characteristics

20

V = -4.5V

GS

16

12

8

4

D

- I , DRAIN-SOURCE CURRENT (A)
0

0 1 2 3 4 5

Figure 1. On-Region Characteristics.

1.6

I = -3.2A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

-3.0V

-2.5V

-2.0V

-1.5V

-V , DRAIN-SOURCE VOLTAGE (V)

DS

T , JUNCTION TEMPERATURE (°C)

J

2.5

V = -2.0 V

GS

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 5 10 15 20

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.2

0.15

0.1

0.05

DS(ON)

R , ON-RESISTANCE (OHM)

0

1 2 3 4 5

-2.5V

-3.0V

-3.5V

- I , DRAIN CURRENT (A)

D

o

T = 125 C

A

25°C

- V , GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

I = -1.6A

D

Figure 3. On-Resistance Variation

with Temperature.

15

V = -5V

DS

12

9

6

D

- I , DRAIN CURRENT (A)

3

0

0.9 1.2 1.5 1.8 2.1 2.4 2.7

-V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T =-55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

15

V = 0V

GS

T = 125°C

1

J

25°C

0.1

0.01

S

- I , REVERSE DRAIN CURRENT (A)

0.001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDR8308P Rev.C