Fairchild Semiconductor FDR8305N Datasheet

FDR8305N

Dual N-Channel 2.5V Specified PowerTrench







MOSFET

FD8305N

November 1999

General Description

These N-Channel 2.5V specified MOSFET s are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the

Features

4.5 A, 20 V. R

•

R

DS(ON)

DS(ON)

= 0.022 Ω @ V

= 0.028 Ω @ V

= 4.5 V

GS

= 2.5 V.

GS

on-state resistance and yet maintain low gate charge for
superior switching performance.

Applications

• Load switch

• Motor driving

• Low gate charge (16.2nC typical).

• Fast switching speed.

• High performance trench technology for extremely

low R

DS(ON)

.

• Power Management

• Small footprint (38% smaller than a standard SO-8);low

profile package (1 mm thick); power handling capability
similar to SO-8.

D2

D2

D1

D1

S2

G2

S1

Super SO T -8

TM

G1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

5
6

7

8

4

3
2

1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous

(Note 1a)

±

8

4.5 A

- Pulsed 20

Power Dissipation for Singl e Operation

(Note 1a)

0.8 W

Operating and Storage Juncti on Temperature Range -55 to +150

V

°

C

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

156

40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

.8305 FDR8305N 13’’ 12mm 3000 units

1999 Fairchild Semiconductor Corporation

°

C/W

°

C/W

FD8305N Rev. C

FD8305N

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆

BV

∆

T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

∆

GS(th)

V

∆

T

R

DS(on)

I

D(on)

g

FS

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

V

= 0 V, ID = 250 µA

GS

= 250 µA, Referenced to

I

D

25°C

20 V

14

Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
Gate-Body Leakage Current,

VGS = 8 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,

VGS = -8 V, VDS = 0 V -100 nA
Reverse

(Note 2)

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to

I

D

25°C

VGS = 4.5 V, ID = 4.5 A

=4.5 V, ID=4.5 A, TJ=125°C

V

GS

= 2.5 V, ID = 4 A

V

GS

0.4 0.85 1.5 V

-3

0.015

0.026

0.020

On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A
Forward Transconductance VDS = 4.5 V, ID = 4.5 A 24 S

0.022

0.040

0.028

mV/°C

µ

A

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1600 pF
Output Capacitance 380 pF
Reverse Transfer Capacitance

V

= 10 V, VGS = 0 V,

DS

f = 1.0 MHz

200 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time 12 22 ns
Turn-On Rise Time 15 27 ns
Turn-Off Delay Time 35 55 ns
Turn-Off Fall Time
Total Gate Charge 16.2 23 nC
Gate-Source Charge 2.5 nC
Gate-Drain Charge

(Note 2)

V

= 10 V, ID = 1 A,

DD

= 4.5 V, R

V

GS

V

= 10 V, ID = 4.5 A,

DS

= 4.5 V

V

GS

GEN

= 6

Ω

18 30 ns

5.5 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

R

θJC

Scale 1 : 1 on letter size paper

2. Pulse T est: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Di ode Forward Current 0.67 A
Drain-Source Diode Forward VoltageVGS = 0 V, IS = 0.67 A

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R

156OC/W on a minimum mounting pad of 2oz copper.

is determined by the user’s board design. Both devices are assumed to be operating and sharing the dissipated heat energy equally.

θCA

2)

(Note

0.65 1.2 V

FD8305N Rev. C

T ypical Characteristics

FD8305N

20

VGS = 4.5V

3.0V

16

2.5V

12

8

, DRAIN CURRENT (A)

D

I

4

0

0 0.4 0.8 1.2 1.6 2

2.0V

1.5V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.6
ID = 4.5A

= 4.5V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

1.8

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

DRAIN-SOURCE ON-RESISTANCE

0.8

VGS = 2.0V

2.5V

3.0V

3.5V

4.0V

1

0 4 8 12 16 20

I

, DRAIN CURRENT (A)

D

4.5V

Figure 2. On-Resistance Variation

with Drain Current and Gate V oltage.

0.06

0.05

0.04

0.03

0.02

, ON-RESISTANCE (OHM )

DS(ON)

0.01

R

0

12345

, GATE TO SOURCE VOLTAGE (V)

V

GS

ID = 2.3A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation

with Temperature.

20

VDS = 5V

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

0.5 1 1.5 2 2.5

V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 5. Transfer Characteristics.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

100

VGS = 0V

10

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

I

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

-55oC

V

, BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

FD8305N Rev. C