Fairchild Semiconductor FDR6674A Datasheet
FDR6674A
30V N-Channel PowerTrench
MOSFET
FDR6674A
April 2000
PRELIMINARY
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R
in a small package.
DS(ON)
Applications
• Synchronous rectifier
Features
• 11.5 A, 30 V. R
R
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability in a
smaller footprint than SO8
= 9.5 mΩ @ VGS = 4.5 V
DS(ON)
= 8.5 mΩ @ VGS = 10 V
DS(ON)
• DC/DC converter
S
D
D
S
G
SuperSOT -8
TM
D
D
D
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 30 V
Gate-Source Voltage
±12
Drain Current – Continuous (Note 1a) 11.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 1.8
(Note 1b)
(Note 1c)
1.0
0.9
Operating and Storage Junction Temperature Range -55 to +150
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 70
Thermal Resistance, Junction-to-Case (Note 1) 20
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.6674A FDR6674A 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporati on
°C/W
°C/W
FDR6674A Rev C(W)
FDR6674A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
I
= 250 µA, Referenced to 25°C
D
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V , VDS = 0 V –100 nA
30 V
23
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
===∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
I
= 250 µA, Referenced to 25°C
D
= 4.5 V, ID = 10.5 A
V
GS
= 4.5 V, ID = 10.5 A, TJ 125°C
V
GS
= 10 V, ID = 11.5 A
V
GS
On–State Drain Current VGS = 4.5 V, VDS = 5 V 50 A
Forward Transconductance VDS = 10 V, ID = 11.5 A 75 S
0.8 1.2 2 V
-4
8.2
11.5
6.8
9.5
16
mV/°C
mΩ
8
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 5070 pF
Output Capacitance 550 pF
Reverse Transfer Capacitance
= 15 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
230 pF
Switching Characteristics (Note 2)
V
= 10 V, ID = 1 A,
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 17 25 ns
Turn–On Rise Time 18 25 ns
Turn–Off Delay Time 69 100 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 33 46 nC
Gate–Source Charge 7.5 nC
Gate–Drain Charge
DD
= 4.5 V, R
V
GS
V
= 15 V, ID = 11.5 A,
DS
= 4.5V
V
GS
GEN
= 6 Ω
29 42 ns
6.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
V
GS
µA
a) 70°/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
b) 125°/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 135°/W when mounted on a
minimum pad.
FDR6674A Rev C(W)
Typical Characteristics
FDR6674A
50
VGS = 4.5V
40
30
20
10
0
3.5V
00.511.5
3.0V
2.5V
2.0V
, DRAIN-SOURCE VO LTAGE (V)
V
DS
1.5
1.3
1.1
0.9
0 102030405060
VGS = 2.5V
3.0V
3.5V
4.0V
4.5V
, DRAIN CURR ENT (A)
I
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 11.5A
V
= 10V
1.6
GS
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEM PERATURE (oC)
T
J
0.025
0.02
0.015
0.01
TA = 25oC
0.005
12.545.578.510
V
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
GS
ID = 5.8 A
Figure 3. On-Resistance Variation
withTemperature.
60
VDS = 5V
45
30
TA = 125oC
15
0
0.5 1 1.5 2 2.5 3
V
, GATE TO SOURCE VOLTAGE (V)
GS
25oC
-55oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
00.20.40.60.811.21.4
TA = 125oC
25oC
-55oC
V
, BODY DIODE FORWA RD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDR6674A Rev C(W)
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